Invention Application
- Patent Title: Chemical mechanical polishing endpoint detection system and method
- Patent Title (中): 化学机械抛光终点检测系统及方法
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Application No.: US10602034Application Date: 2003-06-23
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Publication No.: US20040192169A1Publication Date: 2004-09-30
- Inventor: Norio Kimura , Huey-Ming Wang , Masayuki Kumekawa
- Applicant: Ebara Technologies Incorporated
- Applicant Address: CA Sacramento
- Assignee: Ebara Technologies Incorporated
- Current Assignee: Ebara Technologies Incorporated
- Current Assignee Address: CA Sacramento
- Main IPC: B24B049/00
- IPC: B24B049/00 ; B24B051/00 ; B24B001/00

Abstract:
The system includes a polishing pad, a pad height sensor; a window; and a window raising mechanism. The polishing pad has an aperture with the window vertically moveable therein. The pad height sensor is positioned above the polishing pad and measures the vertical position of the pad before polishing. The window raising mechanism adjusts the vertical position of the window based on information from the pad height sensor. An endpoint measurement sensor can be disposed beneath the window for in-situ measurement of the polishing process.
Public/Granted literature
- US06913514B2 Chemical mechanical polishing endpoint detection system and method Public/Granted day:2005-07-05
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