发明申请
- 专利标题: Semiconductor device and its manufacturing method
- 专利标题(中): 半导体器件及其制造方法
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申请号: US10890129申请日: 2004-07-14
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公开(公告)号: US20040256623A1公开(公告)日: 2004-12-23
- 发明人: Shunpei Yamazaki
- 申请人: Semiconductor Energy Laboratory Co., Ltd., a Japan corporation
- 申请人地址: null
- 专利权人: Semiconductor Energy Laboratory Co., Ltd., a Japan corporation
- 当前专利权人: Semiconductor Energy Laboratory Co., Ltd., a Japan corporation
- 当前专利权人地址: null
- 优先权: JP2000-298304 20000929
- 主分类号: H01L029/04
- IPC分类号: H01L029/04
摘要:
An object of the present invention is to provide an active matrix type display unit having a pixel structure in which a pixel electrode formed in a pixel portion a scanning line (gate line) and a data line are suitably arranged, and high numerical aperture is realized without increasing the number of masks and the number of processes. In this display unit, a first wiring arranged between a semiconductor film and a substrate through a first insulating film is overlapped with this semiconductor film and is used as a light interrupting film. Further, a second insulating film used as a gate insulating film is formed on the semiconductor film. A gate electrode and a second wiring are formed on the second insulating film. The first and second wirings cross each other through the first and second insulating films. A third insulating film is formed as an interlayer insulating film on the second wiring, and a pixel electrode is formed on this third insulating film. The pixel electrode can be overlapped with the first and second wirings so that an area of the pixel electrode can be increased in the display unit of a reflection type.
公开/授权文献
- US07319238B2 Semiconductor device and its manufacturing method 公开/授权日:2008-01-15
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