- 专利标题: Semiconductor device
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申请号: US10892271申请日: 2004-07-16
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公开(公告)号: US20050002251A1公开(公告)日: 2005-01-06
- 发明人: Riichiro Takemura , Kiyoo Itoh , Tomonori Sekiguchi , Takeshi Sakata , Katsutaka Kimura
- 申请人: Riichiro Takemura , Kiyoo Itoh , Tomonori Sekiguchi , Takeshi Sakata , Katsutaka Kimura
- 专利权人: Renesas Technology Corp.
- 当前专利权人: Renesas Technology Corp.
- 优先权: JP11-042666 19990222
- 主分类号: G11C7/06
- IPC分类号: G11C7/06 ; G11C11/406 ; G11C11/4074 ; G11C11/4091 ; G11C7/02
摘要:
A sense amplifier capable of performing high-speed data sense operation with lower power consumption using a minuscule signal from a memory cell even in a case where a memory array voltage is reduced. A plurality of drive switches for over-driving are distributively arranged in a sense amplifier area, and a plurality of drive switches for restore operation are concentratively disposed at one end of a row of the sense amplifiers. A potential for over-driving is supplied using a meshed power line circuit. Through the use of the drive switches for over-driving, initial sense operation can be performed on data line pairs with a voltage having an amplitude larger than a data-line amplitude, allowing implementation of high-speed sense operation. The distributed arrangement of the drive switched for over-driving makes it possible to dispersively supply current in sense operation, thereby reducing a difference in sense voltage with respect to far and near positions of the sense amplifiers.
公开/授权文献
- US06944078B2 Semiconductor device 公开/授权日:2005-09-13
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