- 专利标题： Process for preparing a stabilized ideal oxygen precipitating silicon wafer
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申请号： US10615127申请日： 2003-07-08
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公开(公告)号： US20050005841A1公开(公告)日： 2005-01-13
- 发明人: Robert Falster , Vladimir Voronkov
- 申请人： Robert Falster , Vladimir Voronkov
- 专利权人： MEMC Electronic Materials, Inc.
- 当前专利权人： MEMC Electronic Materials, Inc.
- 主分类号： C30B33/00
- IPC分类号： C30B33/00 ; C30B15/00 ; C30B21/06 ; C30B27/02 ; C30B28/10 ; C30B30/04
摘要：
The present invention is directed to a single crystal Czochralski-type silicon wafer, and a process for the preparation thereof, which has a non-uniform distribution of stabilized oxygen precipitate nucleation centers therein. Specifically, the peak concentration is located in the wafer bulk and a precipitate-free zone extends inward from a surface.
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