发明申请
- 专利标题: Bicmos structure, method for producing the same and bipolar transistor for a bicmos structure
- 专利标题(中): 双晶体结构,其制造方法和双晶体结构的双极晶体管
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申请号: US10497827申请日: 2002-12-06
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公开(公告)号: US20050006724A1公开(公告)日: 2005-01-13
- 发明人: Karl-Ernst Ehwald , Alexander Fox , Dieter Knoll , Bernd Heinemann , Steffen Marschmayer , Katrin Blum
- 申请人: Karl-Ernst Ehwald , Alexander Fox , Dieter Knoll , Bernd Heinemann , Steffen Marschmayer , Katrin Blum
- 优先权: DE10162074.8 20011206
- 国际申请: PCT/EP02/13858 WO 20021206
- 主分类号: H01L21/331
- IPC分类号: H01L21/331 ; H01L21/8249 ; H01L27/06 ; H01L29/737 ; H01L27/082 ; H01L27/102 ; H01L29/70
摘要:
The invention concerns a bipolar transistor with an epitaxially grown base and a self-positioned emitter, whereby the base is formed from a first substantially monocrystalline epitaxial region (1) which is arranged in parallel relationship to the surface of the semiconductor substrate (2) and a second substantially polycrystalline and highly doped region (3) of the same conductivity type which is arranged in perpendicular relationship to the substrate surface and encloses the first region at all sides and that said second region, at least at one side but preferably at all four sides, is conductingly connected to a third, preferably highly doped or metallically conducting, high temperature-resistant polycrystalline layer (4) which is arranged in parallel relationship to the surface of the semiconductor substrate and forms or includes the outer base contact to a metallic conductor track system.