公开(公告)号：US20120001192A1

公开(公告)日：2012-01-05

申请号：US12998869

申请日：2009-12-03

申请人： Alexander Fox ,  Bernd Heinemann ,  Steffen Marschmeyer

发明人： Alexander Fox ,  Bernd Heinemann ,  Steffen Marschmeyer

IPC分类号： H01L29/70 ,  H01L21/331

CPC分类号： H01L29/66242 ,  H01L21/8222 ,  H01L21/8249 ,  H01L29/0804 ,  H01L29/0817 ,  H01L29/0821 ,  H01L29/1004 ,  H01L29/161 ,  H01L29/66272 ,  H01L29/7322 ,  H01L29/7371

摘要： A semiconductor device, comprising a substrate layer made of a semiconductor material of a first conductivity type and having a first insulation region, and a vertical bipolar transistor having a first vertical portion of a collector made of monocrystalline semiconductor material of a second conductivity type and disposed in an opening of the first insulation region, a second insulation region lying partly on the first vertical portion of the collector and partly on the first insulation region and having an opening in the region of the collector, in which opening a second vertical portion of the collector made of monocrystalline material is disposed, said portion including an inner region of the second conductivity type, a base made of monocrystalline semiconductor material of the first conductivity type, a base connection region surrounding the base in the lateral direction, a T-shaped emitter made of semiconductor material of the second conductivity type and overlapping the base connection region, wherein the base connection region, aside from a seeding layer adjacent the substrate or a metallization layer adjacent a base contact, consists of a semiconductor material which differs in its chemical composition from the semiconductor material of the collector, the base and the emitter and in which the majority charge carriers of the first conductivity type have greater mobility compared thereto.

摘要翻译： 一种半导体器件，包括由第一导电类型的半导体材料制成并具有第一绝缘区域的衬底层和垂直双极晶体管，其具有由第二导电类型的单晶半导体材料制成的集电体的第一垂直部分，并且被布置 在第一绝缘区域的开口中，第二绝缘区域部分地位于集电器的第一垂直部分上并且部分地位于第一绝缘区域上并且在集电器的区域中具有开口，其中开口的第二垂直部分 设置由单晶材料构成的集电体，所述部分包括第二导电类型的内部区域，由第一导电类型的单晶半导体材料制成的基底，在横向方向上围绕基底的基极连接区域，T形发射极 由第二导电类型的半导体材料制成并与基底连接重叠 其中基底连接区域除了与基底相邻的晶种层或邻近基极接触处的金属化层组成，其半导体材料的化学成分不同于集电极，基极和发射极的半导体材料 并且其中第一导电类型的多数电荷载流子具有比其更大的迁移率。

公开(公告)号：US07307336B2

公开(公告)日：2007-12-11

申请号：US10497827

申请日：2002-12-06

申请人： Karl-Ernst Ehwald ,  Alexander Fox ,  Dieter Knoll ,  Bernd Heinemann ,  Steffen Marschmayer ,  Katrin Blum

发明人： Karl-Ernst Ehwald ,  Alexander Fox ,  Dieter Knoll ,  Bernd Heinemann ,  Steffen Marschmayer ,  Katrin Blum

IPC分类号： H01L27/102

CPC分类号： H01L29/66242 ,  H01L21/8249 ,  H01L27/0623 ,  H01L29/7378

摘要： The invention concerns a bipolar transistor with an epitaxially grown base and a self-positioned emitter, whereby the base is formed from a first substantially monocrystalline epitaxial region (1) which is arranged in parallel relationship to the surface of the semiconductor substrate (2) and a second substantially polycrystalline and highly doped region (3) of the same conductivity type which is arranged in perpendicular relationship to the substrate surface and encloses the first region at all sides and that said second region, at least at one side but preferably at all four sides, is conductingly connected to a third, preferably highly doped or metallically conducting, high temperature-resistant polycrystalline layer (4) which is arranged in parallel relationship to the surface of the semiconductor substrate and forms or includes the outer base contact to a metallic conductor track system.

摘要翻译： 本发明涉及一种具有外延生长的基极和自定位发射极的双极晶体管，由此该基极由与半导体衬底（2）的表面平行关系设置的第一基本单晶外延区（1）形成，以及 相同导电类型的第二基本上多晶和高度掺杂的区域（3），其被布置成与衬底表面成垂直的关系，并且在所有侧面包围第一区域，并且所述第二区域至少在一侧，但优选地全部为四个 侧面与第三，优选高度掺杂或金属导电的耐高温多晶层（4）导电连接，该多晶层与半导体衬底的表面平行地布置，并形成或包括与金属导体 轨道系统

公开(公告)号：US20050006724A1

公开(公告)日：2005-01-13

申请号：US10497827

申请日：2002-12-06

申请人： Karl-Ernst Ehwald ,  Alexander Fox ,  Dieter Knoll ,  Bernd Heinemann ,  Steffen Marschmayer ,  Katrin Blum

发明人： Karl-Ernst Ehwald ,  Alexander Fox ,  Dieter Knoll ,  Bernd Heinemann ,  Steffen Marschmayer ,  Katrin Blum

IPC分类号： H01L21/331 ,  H01L21/8249 ,  H01L27/06 ,  H01L29/737 ,  H01L27/082 ,  H01L27/102 ,  H01L29/70

CPC分类号： H01L29/66242 ,  H01L21/8249 ,  H01L27/0623 ,  H01L29/7378

摘要： The invention concerns a bipolar transistor with an epitaxially grown base and a self-positioned emitter, whereby the base is formed from a first substantially monocrystalline epitaxial region (1) which is arranged in parallel relationship to the surface of the semiconductor substrate (2) and a second substantially polycrystalline and highly doped region (3) of the same conductivity type which is arranged in perpendicular relationship to the substrate surface and encloses the first region at all sides and that said second region, at least at one side but preferably at all four sides, is conductingly connected to a third, preferably highly doped or metallically conducting, high temperature-resistant polycrystalline layer (4) which is arranged in parallel relationship to the surface of the semiconductor substrate and forms or includes the outer base contact to a metallic conductor track system.

摘要翻译： 本发明涉及一种具有外延生长的基极和自定位发射极的双极晶体管，由此该基极由与半导体衬底（2）的表面平行关系设置的第一基本单晶外延区（1）形成，以及 相同导电类型的第二基本上多晶和高度掺杂的区域（3），其被布置成与衬底表面成垂直的关系，并且在所有侧面包围第一区域，并且所述第二区域至少在一侧，但优选地全部为四个 侧面与第三，优选高度掺杂或金属导电的耐高温多晶层（4）导电连接，该多晶层与半导体衬底的表面平行地布置，并形成或包括与金属导体 轨道系统

公开(公告)号：US08933537B2

公开(公告)日：2015-01-13

申请号：US12998869

申请日：2009-12-03

申请人： Alexander Fox ,  Bernd Heinemann ,  Steffen Marschmeyer

发明人： Alexander Fox ,  Bernd Heinemann ,  Steffen Marschmeyer

IPC分类号： H01L27/102 ,  H01L29/66 ,  H01L29/08 ,  H01L29/10 ,  H01L29/161 ,  H01L29/732 ,  H01L29/737

CPC分类号： H01L29/66242 ,  H01L21/8222 ,  H01L21/8249 ,  H01L29/0804 ,  H01L29/0817 ,  H01L29/0821 ,  H01L29/1004 ,  H01L29/161 ,  H01L29/66272 ,  H01L29/7322 ,  H01L29/7371

摘要： A semiconductor device, comprising a substrate layer made of a semiconductor material of a first conductivity type and having a first insulation region, and a vertical bipolar transistor having a first vertical portion of a collector made of monocrystalline semiconductor material of a second conductivity type and disposed in an opening of the first insulation region, a second insulation region lying partly on the first vertical portion of the collector and partly on the first insulation region and having an opening in the region of the collector, in which opening a second vertical portion of the collector made of monocrystalline material is disposed, said portion including an inner region of the second conductivity type, a base made of monocrystalline semiconductor material of the first conductivity type, a base connection region surrounding the base in the lateral direction, a T-shaped emitter made of semiconductor material of the second conductivity type and overlapping the base connection region, wherein the base connection region, aside from a seeding layer adjacent the substrate or a metallization layer adjacent a base contact, consists of a semiconductor material which differs in its chemical composition from the semiconductor material of the collector, the base and the emitter and in which the majority charge carriers of the first conductivity type have greater mobility compared thereto.

摘要翻译： 一种半导体器件，包括由第一导电类型的半导体材料制成并具有第一绝缘区域的衬底层和垂直双极晶体管，其具有由第二导电类型的单晶半导体材料制成的集电体的第一垂直部分，并且被布置 在第一绝缘区域的开口中，第二绝缘区域部分地位于集电器的第一垂直部分上并且部分地位于第一绝缘区域上并且在集电器的区域中具有开口，其中开口的第二垂直部分 设置由单晶材料构成的集电体，所述部分包括第二导电类型的内部区域，由第一导电类型的单晶半导体材料制成的基底，在横向方向上围绕基底的基极连接区域，T形发射极 由第二导电类型的半导体材料制成并与基底连接重叠 其中基底连接区域除了与基底相邻的晶种层或邻近基极接触处的金属化层组成，其半导体材料的化学成分不同于集电极，基极和发射极的半导体材料 并且其中第一导电类型的多数电荷载流子具有比其更大的迁移率。