发明申请
US20050013180A1 Memory circuit, display device and electronic equipment each comprising the same
有权
存储器电路，显示装置和各自包括其的电子设备
- 专利标题： Memory circuit, display device and electronic equipment each comprising the same
- 专利标题（中）： 存储器电路，显示装置和各自包括其的电子设备
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申请号： US10890110申请日： 2004-07-14
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公开(公告)号： US20050013180A1公开(公告)日： 2005-01-20
- 发明人: Jun Koyama , Tomoaki Atsumi
- 申请人： Jun Koyama , Tomoaki Atsumi
- 优先权： JP2003-277068 20030718
- 主分类号： G02F1/1345
- IPC分类号： G02F1/1345 ; G02F1/133 ; G02F1/1368 ; G09G3/20 ; G09G3/30 ; G09G3/36 ; G11C7/00 ; G11C8/08 ; G11C11/407 ; G11C11/408 ; G11C11/413 ; G11C11/418 ; G11C17/18 ; H01L51/50 ; G11C11/00
摘要：
A memory circuit using a thin film transistor has been problems such as the drop in yield and the decrease in speed of response of the memory circuit due to variations in transistors. The purpose of the invention is to improve the yield and speed of the response of a memory cell by driving a word line by a voltage which is different from the logical amplitude of the memory cell. The invention is applicable to an SRAM, a DRAM, a mask ROM, and the like. A memory circuit of the invention is formed integrally with a display device for realizing a multi-functional display device.
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