发明申请
- 专利标题: Semiconductor laser device and manufacturing method therefor
- 专利标题(中): 半导体激光器件及其制造方法
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申请号: US10891507申请日: 2004-07-15
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公开(公告)号: US20050018733A1公开(公告)日: 2005-01-27
- 发明人: Kazuhiko Wada , Keisuke Miyazaki , Taiji Morimoto , Yoshiaki Ueda , Masaki Tatsumi
- 申请人: Kazuhiko Wada , Keisuke Miyazaki , Taiji Morimoto , Yoshiaki Ueda , Masaki Tatsumi
- 申请人地址: JP Osaka-shi
- 专利权人: SHARP KABUSHIKI KAISHA
- 当前专利权人: SHARP KABUSHIKI KAISHA
- 当前专利权人地址: JP Osaka-shi
- 优先权: JPJP2003-277292 20030722
- 主分类号: H01L21/306
- IPC分类号: H01L21/306 ; H01S3/14 ; H01S5/00 ; H01S5/20 ; H01S5/22 ; H01S5/223 ; H01S5/323 ; H01S5/343 ; H01S5/40
摘要:
An n-type AlGaAs cladding layer of a first semiconductor laser 39 to be first formed on an n-type GaAs buffer layer 22 is constructed of a two-layer structure of a second n-type AlxGa1-xAs (x=0.500) cladding layer 23 and a first n-type AlxGa1-xAs (x=0.425) cladding layer 24. With this arrangement, in removing by etching the second n-type cladding layer 23 located on the n-type GaAs buffer layer 22 side with HF, no cloudiness occurs since the Al crystal mixture ratio x of the second n-type cladding layer 23 is 0.500, allowing mirror surface etching to be achieved. Moreover, by virtue of selectivity to GaAs, the etching automatically stops in the n-type GaAs buffer layer 22. Even in the above case, ellipticity can be improved by matching the vertical radiation angle θ⊥ to 36 degrees since the Al crystal mixture ratio x of the first n-type cladding layer 24 located on the AlGaAs multi-quantum well active layer 25 side is 0.425.