公开(公告)号：US20050271108A1

公开(公告)日：2005-12-08

申请号：US11138382

申请日：2005-05-27

申请人： Kazuhiko Wada ,  Keisuke Miyazaki ,  Taiji Morimoto ,  Masaki Tatsumi ,  Yoshiaki Ueda

发明人： Kazuhiko Wada ,  Keisuke Miyazaki ,  Taiji Morimoto ,  Masaki Tatsumi ,  Yoshiaki Ueda

IPC分类号： H01S5/22 ,  G11B7/125 ,  H01S5/00 ,  H01S5/223 ,  H01S5/343 ,  H01S5/40

CPC分类号： B82Y20/00 ,  G11B7/1275 ,  H01S5/2206 ,  H01S5/2231 ,  H01S5/3432 ,  H01S5/34326 ,  H01S5/4031 ,  H01S5/4087 ,  H01S2301/173 ,  H01S2304/04

摘要： A manufacturing method for a semiconductor laser in which a ratio of a layer thickness obtained by adding the layer thickness of a p-type GaAs cap layer and the layer thickness of a p-type AlxGa1-xAs (X=0.550) second cladding layer to a layer thickness obtained by adding the layer thickness of a p-type GaAs cap layer and the layer thickness of a p-type AlGaInP second upper cladding layer is identical to a ratio of an etching rate for dry etching of the p-type GaAs cap layer and the p-type AlxGa1-xAs (X=0.550) second cladding layer to an etching rate for dry etching of the p-type GaAs cap layer and the p-type AlGaInP second upper cladding layer.

摘要翻译： 一种半导体激光器的制造方法，其中通过将p型GaAs覆盖层的层厚度相加而得到的层厚度与p型Al <！ - SIPO - > Ga

公开(公告)号：US07180925B2

公开(公告)日：2007-02-20

申请号：US10715025

申请日：2003-11-18

申请人： Yoshiaki Ueda ,  Keisuke Miyazaki ,  Kazuhiko Wada ,  Masaki Tatsumi ,  Taiji Morimoto

发明人： Yoshiaki Ueda ,  Keisuke Miyazaki ,  Kazuhiko Wada ,  Masaki Tatsumi ,  Taiji Morimoto

IPC分类号： H01S5/00

CPC分类号： H01S5/2231 ,  H01S5/0655 ,  H01S5/222 ,  H01S5/4031 ,  H01S5/4087 ,  H01S2302/00

摘要： A light confinement layer constructed of a semiconductor that has a refractive index different from that of p-type second cladding layers is formed to a small film thickness of not greater than 2 μm (about 0.5 μm) on the whole surface of ridge portions of two semiconductor lasers. Thus, the light confinement layer on the ridge portions is made roughly flat so as to be easily removable by etching. As a result, the exposure of p-type second cladding layers of the ridge portions due to deep etching is prevented to allow the confinement of light into the p-type cladding layers to be stably effected. A dielectric film is formed on the light confinement layer and reinforces the current constriction function lost by the reduction in the thickness of the light confinement layer.

摘要翻译： 由具有与p型第二包覆层的折射率不同的折射率的半导体构成的光限制层在两个脊部的整个表面上形成为不大于2μm（约0.5μm）的小的膜厚度 半导体激光器 因此，脊部上的光限制层大致平坦，以便通过蚀刻易于移除。 结果，防止由于深蚀刻而引起的脊部的p型第二包覆层的曝光，从而能够稳定地对p型包层的光进行限制。 在光限制层上形成电介质膜，并且增强了通过光限制层的厚度减小而损失的电流收缩功能。

公开(公告)号：US20060222026A1

公开(公告)日：2006-10-05

申请号：US11391370

申请日：2006-03-29

申请人： Kazuhiko Wada

发明人： Kazuhiko Wada

IPC分类号： H01S5/00 ,  H01S3/04

CPC分类号： B82Y20/00 ,  H01S5/221 ,  H01S5/2231 ,  H01S5/3211 ,  H01S5/3432 ,  H01S2304/04

摘要： On an n-type GaAs substrate 19 are formed an n-type GaAs buffer layer 20, a non-doped AlxGa1-xAs light guide evaluation layer 21, an n-type AlxGa1-xAs first clad layer 22, an n-type AlxGa1-xAs second clad layer 23, a non-doped AlxGa1-xAs first light guide layer 24, a non-doped AlxGa1-xAs quantum well active layer 25, a non-doped AlxGa1-xAs second light guide layer 26, a p-type AlxGa1-xAs first clad layer 27, a p-type GaAs etching stop layer 28, a p-type AlxGa1-xAs second clad layer 29 and a p-type GaAs cap layer 30. The Al crystal mixing ratio of the light guide evaluation layer 21 is equal to that of the first and second light guide layers 24, 26. The semiconductor laser device allows the control of layer thickness and material composition of the light guide layers to be fulfilled with simplicity and high precision.

摘要翻译： 在n型GaAs衬底19上形成n型GaAs缓冲层20，非掺杂Al x Ga 1-x As As光导层评估层21， n型Al x Ga 1-x N As第一包层22，n型Al x Ga 1-x 作为第二覆层23，未掺杂的Al x Ga 1-x As As第一导光层24，未掺杂的Al x 作为量子阱有源层25，作为第二光导体的非掺杂Al x Ga 1-x N 2 层26，p型Al x Ga 1-x N As第一包层27，p型GaAs蚀刻停止层28，p型Al

公开(公告)号：US07034341B2

公开(公告)日：2006-04-25

申请号：US10412280

申请日：2003-04-14

申请人： Keisuke Miyazaki ,  Kazuhiko Wada ,  Taiji Morimoto

发明人： Keisuke Miyazaki ,  Kazuhiko Wada ,  Taiji Morimoto

IPC分类号： H10L33/12

CPC分类号： H01S5/22 ,  H01S5/2081 ,  H01S5/4087 ,  H01S2301/173

摘要： An AlGaAs-based semiconductor laser 29 is formed on an n-type GaAs substrate 21 and thereafter etching is carried out until reaching an n-type AlGaAs clad layer 23 from the surface. Next, the n-type AlGaAs clad layer 23 is removed by etching with an etchant having selectivity to GaAs. Subsequently, the surface of an n-type GaAs buffer layer 22 is lightly etched. Thus, the n-type GaAs buffer layer 22 of the AlGaAs-based semiconductor laser 29 is left in a slightly abraded state on the n-type GaAs substrate 21, maintaining the flatness of the groundwork layer during growing an AlGaInP-based semiconductor laser 38 at the second time. Therefore, the flatness of the crystals of, in particular, an active layer grown at the second time can be improved, and the poor characteristics of the AlGaInP-based semiconductor laser 38 attributed to the poor flatness of the groundwork can be improved.

摘要翻译： 在n型GaAs衬底21上形成AlGaAs半导体激光器29，然后进行蚀刻，直到从表面到达n型AlGaAs覆盖层23。 接下来，通过用对GaAs的选择性的蚀刻剂进行蚀刻来去除n型AlGaAs覆盖层23。 随后，轻蚀刻n型GaAs缓冲层22的表面。 因此，基于AlGaAs的半导体激光器29的n型GaAs缓冲层22在n型GaAs衬底21上处于略微磨损的状态，在生长AlGaInP基半导体激光器38期间保持基底层的平坦度 第二次 因此，可以提高特别是第二次生长的有源层的晶体的平坦度，并且可以提高归因于基础的平坦度差的AlGaInP基半导体激光器38的差的特性。

公开(公告)号：US20050018733A1

公开(公告)日：2005-01-27

申请号：US10891507

申请日：2004-07-15

申请人： Kazuhiko Wada ,  Keisuke Miyazaki ,  Taiji Morimoto ,  Yoshiaki Ueda ,  Masaki Tatsumi

发明人： Kazuhiko Wada ,  Keisuke Miyazaki ,  Taiji Morimoto ,  Yoshiaki Ueda ,  Masaki Tatsumi

IPC分类号： H01L21/306 ,  H01S3/14 ,  H01S5/00 ,  H01S5/20 ,  H01S5/22 ,  H01S5/223 ,  H01S5/323 ,  H01S5/343 ,  H01S5/40

CPC分类号： B82Y20/00 ,  H01S5/2206 ,  H01S5/2231 ,  H01S5/3432 ,  H01S5/4031 ,  H01S5/4087 ,  H01S2304/04

摘要： An n-type AlGaAs cladding layer of a first semiconductor laser 39 to be first formed on an n-type GaAs buffer layer 22 is constructed of a two-layer structure of a second n-type AlxGa1-xAs (x=0.500) cladding layer 23 and a first n-type AlxGa1-xAs (x=0.425) cladding layer 24. With this arrangement, in removing by etching the second n-type cladding layer 23 located on the n-type GaAs buffer layer 22 side with HF, no cloudiness occurs since the Al crystal mixture ratio x of the second n-type cladding layer 23 is 0.500, allowing mirror surface etching to be achieved. Moreover, by virtue of selectivity to GaAs, the etching automatically stops in the n-type GaAs buffer layer 22. Even in the above case, ellipticity can be improved by matching the vertical radiation angle θ⊥ to 36 degrees since the Al crystal mixture ratio x of the first n-type cladding layer 24 located on the AlGaAs multi-quantum well active layer 25 side is 0.425.

摘要翻译： 首先形成在n型GaAs缓冲层22上的第一半导体激光器39的n型AlGaAs覆层由第二n型Al x Ga 1-x As（x = 0.500）包层的两层结构构成 23和第一n型Al x Ga 1-x As（x = 0.425）包覆层24.通过这种布置，通过用HF除去位于n型GaAs缓冲层22侧的第二n型包覆层23， 由于第二n型包覆层23的Al晶体混合比x为0.500，因此发生混浊，从而能够实现镜面蚀刻。 此外，由于对GaAs的选择性，在n型GaAs缓冲层22中蚀刻自动停止。即使在上述情况下，通过将垂直辐射角θ⊥与36度匹配可以提高椭圆率，因为Al晶体混合比 位于AlGaAs多量子阱有源层25一侧的第一n型覆层24的x为0.425。

公开(公告)号：US06967119B2

公开(公告)日：2005-11-22

申请号：US10699553

申请日：2003-10-31

申请人： Taiji Morimoto ,  Keisuke Miyazaki ,  Masaki Tatsumi ,  Kazuhiko Wada ,  Yoshiaki Ueda

发明人： Taiji Morimoto ,  Keisuke Miyazaki ,  Masaki Tatsumi ,  Kazuhiko Wada ,  Yoshiaki Ueda

IPC分类号： H01S5/22 ,  H01S5/30 ,  H01S5/343 ,  H01S5/40 ,  H01L21/00

CPC分类号： B82Y20/00 ,  H01S5/22 ,  H01S5/3054 ,  H01S5/3432 ,  H01S5/34326 ,  H01S5/4031 ,  H01S5/4087

摘要： There is provided a semiconductor laser device having on a single substrate a plurality of laser portions each oscillating laser light of a different wavelength, the plurality of laser portions containing different types, respectively, of dopant. There is also provided a method of fabricating a semiconductor laser device, forming on a single substrate a plurality of laser portions each oscillating laser light of a different wavelength, initially forming a laser portion in a crystal growth method and subsequently forming another laser portion in a different crystal growth method.

摘要翻译： 提供了一种在单个基板上具有分别振荡不同波长的激光的多个激光部分的多个激光部分分别包含不同类型的掺杂剂的半导体激光器件。 还提供一种制造半导体激光器件的方法，在单个基板上形成多个激光器部分，每个激光器各自振荡不同波长的激光，最初在晶体生长方法中形成激光部分，随后在其中形成另一激光器部分 不同的晶体生长方法。

公开(公告)号：US06919217B2

公开(公告)日：2005-07-19

申请号：US10412297

申请日：2003-04-14

申请人： Keisuke Miyazaki ,  Kazuhiko Wada ,  Taiji Morimoto

发明人： Keisuke Miyazaki ,  Kazuhiko Wada ,  Taiji Morimoto

IPC分类号： G11B7/125 ,  H01S5/22 ,  H01S5/323 ,  H01S5/343 ,  H01S5/40 ,  H01L21/00

CPC分类号： B82Y20/00 ,  H01S5/323 ,  H01S5/3432 ,  H01S5/4031 ,  H01S5/4087 ,  H01S2304/00

摘要： An AlGaAs-based semiconductor laser 29 is formed on an n-type GaAs substrate 21, and thereafter, a non-doped GaAs protective layer 30 is formed. When the n-type substrate 21 is exposed by removing by etching a partial region of the AlGaAs-based semiconductor laser 29, an impurity Zn is prevented from evaporating from a p-type GaAs contact layer 28. The deterioration of the characteristic of contact with a p-type electrode as a consequence of a reduction in the carrier density of the p-type contact layer 28 can be prevented. Furthermore, the impurity evaporated from the p-type contact layer 28 can be prevented from readhering onto the exposed n-type substrate 21. A layer where the n-type GaAs substrate 21 and the readhering impurity are mixed with each other is not formed when an AlGaInP-based semiconductor laser 38 is succeedingly formed, and the reliability in long-term operation can be improved.

摘要翻译： 在n型GaAs衬底21上形成AlGaAs半导体激光器29，然后形成非掺杂GaAs保护层30。 当通过蚀刻Al AlAs基半导体激光器29的局部区域去除n型衬底21时，防止杂质Zn从p型GaAs接触层28蒸发。 可以防止作为p型接触层28的载流子浓度降低的结果与p型电极接触的特性的劣化。 此外，可以防止从p型接触层28蒸发的杂质再次附着在露出的n型基板21上。 当形成AlGaInP基半导体激光器38时，不形成n型GaAs衬底21和再生杂质彼此混合的层，并且可以提高长期工作的可靠性。