Invention Application
- Patent Title: Method of depositing dielectric films
- Patent Title (中): 沉积介质膜的方法
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Application No.: US10894872Application Date: 2004-07-20
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Publication No.: US20050020048A1Publication Date: 2005-01-27
- Inventor: Srinivas Nemani , Li-Qun Xia , Dian Sugiarto , Ellie Yieh , Ping Xu , Francimar Campana-Schmitt , Jia Lee
- Applicant: Srinivas Nemani , Li-Qun Xia , Dian Sugiarto , Ellie Yieh , Ping Xu , Francimar Campana-Schmitt , Jia Lee
- Main IPC: C23C16/42
- IPC: C23C16/42 ; C23C16/32 ; H01L21/20 ; H01L21/314 ; H01L21/768 ; H01L23/522 ; H01L21/331
Abstract:
A method of forming a silicon carbide layer for use in integrated circuit fabrication processes is provided. The silicon carbide layer is formed by reacting a gas mixture comprising a silicon source, a carbon source, and a dopant in the presence of an electric field. The as-deposited silicon carbide layer has a compressibility that varies as a function of the amount of dopant present in the gas mixture during later formation.
Public/Granted literature
- US07001850B2 Method of depositing dielectric films Public/Granted day:2006-02-21
Information query
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