发明申请
- 专利标题: SEMICONDUCTOR LIGHT EMITTING DEVICES
- 专利标题(中): 半导体发光器件
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申请号: US10633058申请日: 2003-08-01
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公开(公告)号: US20050023549A1公开(公告)日: 2005-02-03
- 发明人: Nathan Gardner , Jonathan Wierer , Gerd Mueller , Michael Krames
- 申请人: Nathan Gardner , Jonathan Wierer , Gerd Mueller , Michael Krames
- 主分类号: H01L27/15
- IPC分类号: H01L27/15 ; H01L33/00 ; H01L33/22 ; H01L33/40
摘要:
A III-nitride device includes a first n-type layer, a first p-type layer, and an active region separating the first p-type layer and the first n-type layer. The device may include a second n-type layer and a tunnel junction separating the first and second n-type layers. First and second contacts are electrically connected to the first and second n-type layers. The first and second contacts are formed from the same material, a material with a reflectivity to light emitted by the active region greater than 75%. The device may include a textured layer disposed between the second n-type layer and the second contact or formed on a surface of a growth substrate opposite the device layers.
公开/授权文献
- US06847057B1 Semiconductor light emitting devices 公开/授权日:2005-01-25