利索-全球专利检索

  1. Login
  2. Sign Up

Search Results

39 records (took 0.02 seconds)

    Selective filtering of wavelength-converted semiconductor light emitting devices
    3.
    发明申请
    Selective filtering of wavelength-converted semiconductor light emitting devices 失效
    波长转换半导体发光器件的选择滤波

    公开(公告)号：US20070045653A1

    公开(公告)日：2007-03-01

    申请号：US11400057

    申请日：2006-04-07

    Applicant: Michael Krames ,  Gerd Mueller ,  Regina Mueller-Mach

    Inventor： Michael Krames ,  Gerd Mueller ,  Regina Mueller-Mach

    IPC: H01L33/00

    CPC classification number: H01L33/44 ,  H01L33/50 ,  H01L2224/14

    Abstract: A structure includes a semiconductor light emitting device including a light emitting layer disposed between an n-type region and a p-type region. The light emitting layer emits first light of a first peak wavelength. A wavelength-converting material that absorbs the first light and emits second light of a second peak wavelength is disposed in the path of the first light. A filter material that transmits a portion of the first light and absorbs or reflects a portion of the first light is disposed over the wavelength-converting material.

    Abstract translation: 一种结构包括半导体发光器件，其包括设置在n型区域和p型区域之间的发光层。 发光层发射第一峰值波长的第一光。 吸收第一光并发射第二峰值波长的第二光的波长转换材料设置在第一光的路径中。 透射部分第一光并吸收或反射第一光的一部分的过滤材料设置在波长转换材料的上方。

    Package-Integrated Thin Film LED
    4.
    发明申请
    Package-Integrated Thin Film LED 有权
    封装集成薄膜LED

    公开(公告)号：US20060240585A1

    公开(公告)日：2006-10-26

    申请号：US11421350

    申请日：2006-05-31

    Applicant: John Epler ,  Paul Martin ,  Michael Krames

    Inventor： John Epler ,  Paul Martin ,  Michael Krames

    IPC: H01L21/00

    CPC classification number: H01L33/48 ,  H01L24/73 ,  H01L33/0079 ,  H01L33/22 ,  H01L33/32 ,  H01L33/486 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48464 ,  H01L2224/73265 ,  H01L2224/92247 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/00

    Abstract: LED epitaxial layers (n-type, p-type, and active layers) are grown on a substrate. For each die, the n and p layers are electrically bonded to a package substrate that extends beyond the boundaries of the LED die such that the LED layers are between the package substrate and the growth substrate. The package substrate provides electrical contacts and conductors leading to solderable package connections. The growth substrate is then removed. Because the delicate LED layers were bonded to the package substrate while attached to the growth substrate, no intermediate support substrate for the LED layers is needed. The relatively thick LED epitaxial layer that was adjacent the removed growth substrate is then thinned and its top surface processed to incorporate light extraction features. There is very little absorption of light by the thinned epitaxial layer, there is high thermal conductivity to the package because the LED layers are directly bonded to the package substrate without any support substrate therebetween, and there is little electrical resistance between the package and the LED layers so efficiency (light output vs. power input) is high. The light extraction features of the LED layer further improves efficiency.

    Abstract translation: 在衬底上生长LED外延层（n型，p型和有源层）。 对于每个管芯，n和p层电连接到延伸超过LED管芯边界的封装衬底，使得LED层位于封装衬底和生长衬底之间。 封装衬底提供电触头和导体，导致可焊接的封装连接。 然后除去生长底物。 因为精细的LED层在附着于生长衬底的同时与封装衬底结合，所以不需要用于LED层的中间支撑衬底。 然后将与去除的生长衬底相邻的较厚的LED外延层变薄，并将其顶表面加工成掺入光提取特征。 通过减薄的外延层对光的吸收非常小，因为LED层直接接合到封装基板上而没有任何支撑基板，因此封装和LED之间的电阻很小，因此封装的导热性很高 层效率（光输出与功率输入）高。 LED层的光提取特性进一步提高了效率。

    Reverse polarization light emitting region for a semiconductor light emitting device
    5.
    发明申请
    Reverse polarization light emitting region for a semiconductor light emitting device 有权
    用于半导体发光器件的反向偏振发光区域

    公开(公告)号：US20060197100A1

    公开(公告)日：2006-09-07

    申请号：US11226185

    申请日：2005-09-13

    Applicant: Yu-Chen Shen ,  Michael Krames ,  Nathan Gardner

    Inventor： Yu-Chen Shen ,  Michael Krames ,  Nathan Gardner

    IPC: H01L33/00 ,  H01L29/22

    CPC classification number: H01L33/32 ,  H01L33/16

    Abstract: A semiconductor light emitting device includes a light emitting layer disposed between an n-type region and a p-type region. The light emitting layer may be a wurtzite III-nitride layer with a thickness of at least 50 angstroms. The light emitting layer may have a polarization reversed from a conventional wurtzite III-nitride layer, such that across an interface between the light emitting layer and the p-type region, the wurtzite c-axis points toward the light emitting layer. Such an orientation of the c-axis may create a negative sheet charge at an interface within or at the edge of the p-type region, providing a barrier to charge carriers in the light emitting layer.

    Abstract translation: 半导体发光器件包括设置在n型区域和p型区域之间的发光层。 发光层可以是厚度至少为50埃的纤锌矿III族氮化物层。 发光层可以具有与常规的纤锌矿III族氮化物层相反的偏振，使得在发光层和p型区域之间的界面上，纤锌矿c轴指向发光层​​。 c轴的这种取向可以在p型区域的边缘内或边缘处的界面处产生负片材电荷，为发光层中的载流子提供阻挡。

    Package-integrated thin film LED
    7.
    发明申请
    Package-integrated thin film LED 有权

    公开(公告)号：US20060091409A1

    公开(公告)日：2006-05-04

    申请号：US10977294

    申请日：2004-10-28

    Applicant: John Epler ,  Paul Martin ,  Michael Krames

    Inventor： John Epler ,  Paul Martin ,  Michael Krames

    IPC: H01L33/00 ,  H01L21/00

    CPC classification number: H01L33/48 ,  H01L24/73 ,  H01L33/0079 ,  H01L33/22 ,  H01L33/32 ,  H01L33/486 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48464 ,  H01L2224/73265 ,  H01L2224/92247 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/00

    Abstract: LED epitaxial layers (n-type, p-type, and active layers) are grown on a substrate. For each die, the n and p layers are electrically bonded to a package substrate that extends beyond the boundaries of the LED die such that the LED layers are between the package substrate and the growth substrate. The package substrate provides electrical contacts and conductors leading to solderable package connections. The growth substrate is then removed. Because the delicate LED layers were bonded to the package substrate while attached to the growth substrate, no intermediate support substrate for the LED layers is needed. The relatively thick LED epitaxial layer that was adjacent the removed growth substrate is then thinned and its top surface processed to incorporate light extraction features. There is very little absorption of light by the thinned epitaxial layer, there is high thermal conductivity to the package because the LED layers are directly bonded to the package substrate without any support substrate therebetween, and there is little electrical resistance between the package and the LED layers so efficiency (light output vs. power input) is high. The light extraction features of the LED layer further improves efficiency.

    PHOTONIC CRYSTAL LIGHT EMITTING DEVICE
    8.
    发明申请
    PHOTONIC CRYSTAL LIGHT EMITTING DEVICE 有权
    光电晶体发光器件

    公开(公告)号：US20050082545A1

    公开(公告)日：2005-04-21

    申请号：US10691026

    申请日：2003-10-21

    Applicant: Jonathan Wierer ,  Michael Krames ,  Mihail Sigalas

    Inventor： Jonathan Wierer ,  Michael Krames ,  Mihail Sigalas

    IPC: G02B6/122 ,  H01L33/08 ,  H01L33/20 ,  H01L27/15

    CPC classification number: H01L33/20 ,  B82Y20/00 ,  G02B6/1225 ,  H01L33/08 ,  H01L2933/0083

    Abstract: A photonic crystal structure is formed in an n-type layer of a III-nitride light emitting device. In some embodiments, the photonic crystal n-type layer is formed on a tunnel junction. The device includes a first layer of first conductivity type, a first layer of second conductivity type, and an active region separating the first layer of first conductivity type from the first layer of second conductivity type. The tunnel junction includes a second layer of first conductivity type and a second layer of second conductivity type and separates the first layer of first conductivity type from a third layer of first conductivity type. A photonic crystal structure is formed in the third layer of first conductivity type.

    Abstract translation: 在III族氮化物发光器件的n型层中形成光子晶体结构。 在一些实施例中，在隧道结上形成光子晶体n型层。 该器件包括第一导电类型的第一层，第二导电类型的第一层和将第一导电类型的第一层与第一导电类型的第一层分开的有源区。 隧道结包括第一导电类型的第二层和第二导电类型的第二层，并且将第一导电类型的第一层与第一导电类型的第三层分离。 在第一导电类型的第三层中形成光子晶体结构。

    System and method for providing color light sources in proximity to predetermined wavelength conversion structures
    10.
    发明授权
    System and method for providing color light sources in proximity to predetermined wavelength conversion structures 有权
    用于在预定波长转换结构附近提供彩色光源的系统和方法

    公开(公告)号：US08740413B1

    公开(公告)日：2014-06-03

    申请号：US13328978

    申请日：2011-12-16

    Applicant: Michael Krames ,  Troy Trottier ,  Frank Steranka ,  William Houck ,  Arpan Chakraborty

    Inventor： Michael Krames ,  Troy Trottier ,  Frank Steranka ,  William Houck ,  Arpan Chakraborty

    IPC: F21V9/00 ,  F21V9/16 ,  F21V21/00 ,  H01J63/04 ,  H01L33/00

    CPC classification number: H01L33/504 ,  F21K9/00 ,  F21K9/232 ,  F21V29/70 ,  F21Y2105/10 ,  F21Y2105/12 ,  F21Y2113/13 ,  F21Y2115/10 ,  H01L25/0753 ,  H01L27/156 ,  H01L33/60 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: An optical device includes a light source with at least two radiation sources, and at least two layers of wavelength-modifying materials excited by the radiation sources that emit radiation in at least two predetermined wavelengths. Embodiments include a first plurality of n radiation sources configured to emit radiation at a first wavelength. The first plurality of radiation sources are in proximity to a second plurality of m of radiation sources configured to emit radiation at a second wavelength, the second wavelength being shorter than the first wavelength. The ratio between m and n is predetermined. The disclosed optical device also comprises at least two wavelength converting layers such that a first wavelength converting layer is configured to absorb a portion of radiation emitted by the second radiation sources, and a second wavelength converting layer configured to absorb a portion of radiation emitted by the second radiation sources.

    Abstract translation: 光学装置包括具有至少两个辐射源的光源和由辐射源激发的至少两层波长改变材料，所述辐射源以至少两个预定波长发射辐射。 实施例包括被配置为发射第一波长的辐射的第一多个n个辐射源。 所述第一多个辐射源接近配置成发射第二波长的辐射的第二多个m个辐射源，所述第二波长比所述第一波长短。 m和n之间的比率是预定的。 所公开的光学装置还包括至少两个波长转换层，使得第一波长转换层被配置为吸收由第二辐射源发射的辐射的一部分，以及第二波长转换层，其被配置为吸收由第二波长转换层发射的辐射的一部分 第二辐射源。

Patent Agency Ranking