发明申请
- 专利标题： CPP GMR read head
- 专利标题（中）： CPP GMR读头
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申请号： US10631840申请日： 2003-07-31
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公开(公告)号： US20050024792A1公开(公告)日： 2005-02-03
- 发明人: Min Li , Kunliang Zhang , Rachid Sbiaa , Cheng Horng , Simon Liao , Kochan Ju
- 申请人： Min Li , Kunliang Zhang , Rachid Sbiaa , Cheng Horng , Simon Liao , Kochan Ju
- 专利权人： Headway Technologies, Inc.
- 当前专利权人： Headway Technologies, Inc.
- 主分类号： C21D1/04
- IPC分类号： C21D1/04 ; G11B5/39 ; H01F10/32 ; H01F41/30 ; G11B5/33 ; G11B5/127 ; H01F1/00 ; H04R31/00
摘要：
Replacing ruthenium with rhodium as the AFM coupling layer in a synthetically pinned CPP GMR structure enables the AP1/AP2 thicknesses to be increased. This results in improved stability and allows the free layer and AFM layer thicknesses to be decreased, leading to an overall improvement in the device performance. Another key advantage of this structure is that the magnetic annealing requirements (to establish antiparallelism between AP1 and AP2) can be significantly relaxed.
公开/授权文献
- US07068478B2 CPP GMR read head 公开/授权日：2006-06-27
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