Invention Application
- Patent Title: Nonvolatile memory cells with buried channel transistors
- Patent Title (中): 具有埋入沟道晶体管的非易失性存储单元
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Application No.: US10632155Application Date: 2003-07-30
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Publication No.: US20050024961A1Publication Date: 2005-02-03
- Inventor: Yi Ding
- Applicant: Yi Ding
- Main IPC: G11C7/00
- IPC: G11C7/00 ; G11C16/04 ; H01L21/8247 ; H01L27/105 ; H01L27/115
Abstract:
In a nonvolatile memory cell (110), the select gate transistor is formed as a buried channel transistor to increase the transistor current.
Public/Granted literature
- US07101757B2 Nonvolatile memory cells with buried channel transistors Public/Granted day:2006-09-05
Information query
