Invention Application
US20050026366A1 Fabrication of gate dielectric in nonvolatile memories in which a memory cell has multiple floating gates
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非易失性存储器中的栅极电介质的制造，其中存储单元具有多个浮动栅极
- Patent Title: Fabrication of gate dielectric in nonvolatile memories in which a memory cell has multiple floating gates
- Patent Title (中): 非易失性存储器中的栅极电介质的制造，其中存储单元具有多个浮动栅极
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Application No.: US10632154Application Date: 2003-07-30
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Publication No.: US20050026366A1Publication Date: 2005-02-03
- Inventor: Yi Ding
- Applicant: Yi Ding
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L21/8238 ; H01L21/8247 ; H01L27/105
Abstract:
In fabrication of a nonvolatile memory cell having two floating gates, one or more peripheral transistor gates are formed from the same layer (140) as the select gate. The gate dielectric (130) for these peripheral transistors and the gate dielectric (130) for the select gates are formed simultaneously. In a nonvolatile memory having a memory cell with two floating gates, the gate dielectric (130) for the peripheral transistors and the gate dielectric (130) for the select gates (140) have the same thickness.
Public/Granted literature
- US07052947B2 Fabrication of gate dielectric in nonvolatile memories in which a memory cell has multiple floating gates Public/Granted day:2006-05-30
Information query
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