发明申请
- 专利标题： Film forming method and film forming apparatus
- 专利标题（中）： 成膜方法和成膜装置
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申请号： US10927102申请日： 2004-08-27
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公开(公告)号： US20050026454A1公开(公告)日： 2005-02-03
- 发明人: Nobuo Konishi , Mitsuaki Iwashita , Hiroki Ohno , Shigeru Kawamura , Masahito Sugiura
- 申请人： Nobuo Konishi , Mitsuaki Iwashita , Hiroki Ohno , Shigeru Kawamura , Masahito Sugiura
- 优先权： JP2001-70947 20010313
- 主分类号： H01L21/20
- IPC分类号： H01L21/20 ; H01L21/768 ; H01L21/4763 ; H01L21/31 ; H01L21/469 ; H01L23/48 ; H01L23/52 ; H01L29/40
摘要：
The present invention comprises the steps of performing a reforming process on a surface of a low dielectric constant insulation film formed on a substrate which includes one of a porous low dielectric constant insulation film and a non-porous low dielectric constant insulation film and forming an insulation film as at least one of an etching mask and a Chemical Mechanical Polishing stopper (CMP stopper) on the reformed surface of the low dielectric constant insulation film. For example, plasma is radiated as a reforming process mentioned above, the surface roughness of a low dielectric insulation film is increased and, as a result, adhesion between the films and also between the inter-layer insulation film and other neighboring films can be improved with so-called “anchor effect”.
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