公开(公告)号：US06800546B2

公开(公告)日：2004-10-05

申请号：US10095025

申请日：2002-03-12

申请人： Nobuo Konishi ,  Mitsuaki Iwashita ,  Hiroki Ohno ,  Shigeru Kawamura ,  Masahito Sugiura

发明人： Nobuo Konishi ,  Mitsuaki Iwashita ,  Hiroki Ohno ,  Shigeru Kawamura ,  Masahito Sugiura

IPC分类号： H01L214763

CPC分类号： H01L21/76837 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76829

摘要： The present invention comprises the steps of performing a reforming process on a surface of a low dielectric constant insulation film formed on a substrate which includes one of a porous low dielectric constant insulation film and a non-porous low dielectric constant insulation film and forming an insulation film as at least one of an etching mask and a Chemical Mechanical Polishing stopper (CMP stopper) on the reformed surface of the low dielectric constant insulation film. For example, plasma is radiated as a reforming process mentioned above, the surface roughness of a low dielectric insulation film is increased and, as a result, adhesion between the films and also between the inter-layer insulation film and other neighboring films can be improved with so-called “anchor effect”.

摘要翻译： 本发明包括以下步骤：对形成在基板上的低介电常数绝缘膜的表面进行重整工序，该基板包括多孔低介电常数绝缘膜和无孔低介电常数绝缘膜之一，并形成绝缘层 薄膜作为低介电常数绝缘膜的重整表面上的蚀刻掩模和化学机械抛光终止剂（CMP止动器）中的至少一个。 例如，等离子体作为上述重整工序被照射，低介电绝缘膜的表面粗糙度增加，结果，可以改善膜之间以及层间绝缘膜和其它相邻膜之间的粘附性 具有所谓的“锚效应”。

公开(公告)号：US20050026454A1

公开(公告)日：2005-02-03

申请号：US10927102

申请日：2004-08-27

申请人： Nobuo Konishi ,  Mitsuaki Iwashita ,  Hiroki Ohno ,  Shigeru Kawamura ,  Masahito Sugiura

发明人： Nobuo Konishi ,  Mitsuaki Iwashita ,  Hiroki Ohno ,  Shigeru Kawamura ,  Masahito Sugiura

IPC分类号： H01L21/20 ,  H01L21/768 ,  H01L21/4763 ,  H01L21/31 ,  H01L21/469 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L21/76837 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76829

摘要： The present invention comprises the steps of performing a reforming process on a surface of a low dielectric constant insulation film formed on a substrate which includes one of a porous low dielectric constant insulation film and a non-porous low dielectric constant insulation film and forming an insulation film as at least one of an etching mask and a Chemical Mechanical Polishing stopper (CMP stopper) on the reformed surface of the low dielectric constant insulation film. For example, plasma is radiated as a reforming process mentioned above, the surface roughness of a low dielectric insulation film is increased and, as a result, adhesion between the films and also between the inter-layer insulation film and other neighboring films can be improved with so-called “anchor effect”.

摘要翻译： 本发明包括以下步骤：对形成在基板上的低介电常数绝缘膜的表面进行重整工序，该基板包括多孔低介电常数绝缘膜和无孔低介电常数绝缘膜之一，并形成绝缘层 薄膜作为低介电常数绝缘膜的重整表面上的蚀刻掩模和化学机械抛光终止剂（CMP止动器）中的至少一个。 例如，等离子体作为上述重整工序被照射，低介电绝缘膜的表面粗糙度增加，结果，可以改善膜之间以及层间绝缘膜和其它相邻膜之间的粘附性 具有所谓的“锚效应”。

公开(公告)号：US5722875A

公开(公告)日：1998-03-03

申请号：US655672

申请日：1996-05-30

申请人： Mitsuaki Iwashita ,  Nobuo Konishi ,  Gerald A. Krulik ,  Gary Cohrt

发明人： Mitsuaki Iwashita ,  Nobuo Konishi ,  Gerald A. Krulik ,  Gary Cohrt

IPC分类号： B24B37/015 ,  B24B49/02 ,  B24B49/14 ,  B24B49/00 ,  B24B51/00

CPC分类号： B24B37/015 ,  B24B49/02

摘要： The invention relates to a method and an apparatus for polishing an object by CMP with use of a polishing liquid. A change point of the temperature of a surface-to-be-polished of the object at the time of polishing is detected on the basis of information on the temperature of the surface-to-be-polished of the object, which information is obtained in advance at the time of polishing. An end point of the polishing of the object is detected on the basis of information on the change point. The object and a reference object are interlocked and simultaneously polished by a common polishing body, the degree-of-polishing of the reference object is monitored, and the degree-of-polishing of the object is detected on the basis of the degree-of-polishing of the reference object.

摘要翻译： 本发明涉及一种使用抛光液体通过CMP抛光物体的方法和装置。 基于对象的被研磨面的温度的信息来检测抛光时的被研磨面的温度的变化点，获得该信息 提前抛光。 基于关于变化点的信息来检测物体的抛光的终点。 物体和参考对象被共同的抛光体互锁并同时抛光，监视参考对象的抛光度，并且基于目标的程度来检测物体的抛光度 抛光参考对象。

公开(公告)号：US06683006B2

公开(公告)日：2004-01-27

申请号：US10176051

申请日：2002-06-21

申请人： Nobuo Konishi ,  Mitsuaki Iwashita

发明人： Nobuo Konishi ,  Mitsuaki Iwashita

IPC分类号： H01L21302

CPC分类号： H01L21/0273 ,  G03F7/265 ,  H01L21/31144 ,  H01L21/3212 ,  H01L21/6715 ,  H01L21/67155 ,  H01L21/76802 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/7684

摘要： After coating a resist for silylation on the semi-conductor substrate, the resist is exposed with a pattern. Then the silylation process is performed to form a silylated layer and the silylated layer is hardened with performing an electron beam processing or a ultra-violet ray processing. After that, an etching is performed with using the hardened silylated layer as a mask and the wiring step is taken without removing the hardened silylated layer as a stopper for chemical mechanical polishing. With this embodiment, the patterning steps of an insulation film can be simplified.

摘要翻译： 在半导体衬底上涂覆抗硅烷化硅烷后，抗蚀剂以图案曝光。 然后进行甲硅烷基化处理以形成甲硅烷基化层，并且通过进行电子束加工或紫外线处理使甲硅烷基化层硬化。 之后，使用硬化的甲硅烷基化层作为掩模进行蚀刻，并且在不除去硬化的甲硅烷基化层作为化学机械抛光的阻挡物的情况下进行布线步骤。 利用该实施例，可以简化绝缘膜的图案化步骤。

公开(公告)号：US20050260771A1

公开(公告)日：2005-11-24

申请号：US10520406

申请日：2003-07-01

申请人： Mitsuaki Iwashita ,  Nobuo Konishi

发明人： Mitsuaki Iwashita ,  Nobuo Konishi

IPC分类号： H01L21/00 ,  C23C16/00

CPC分类号： H01L21/6708

摘要： An object of the present invention is to previously subject a substrate such as a wafer to predetermined processing to prevent a hard mask or the like from peeling off during polishing processing performed later. In the present invention, a sloped part such that its film thickness becomes thinner toward an outer peripheral part and an end part of the substrate on which a film is formed is formed.

摘要翻译： 本发明的目的是预先对诸如晶片的基板进行预定处理，以防止在以后执行的抛光处理期间硬掩模等被剥离。 在本发明中，形成了其膜厚度朝着形成有膜的基板的外周部分和端部变薄的倾斜部分。

公开(公告)号：US6120361A

公开(公告)日：2000-09-19

申请号：US17368

申请日：1998-02-02

申请人： Nobuo Konishi ,  Mitsuaki Iwashita

发明人： Nobuo Konishi ,  Mitsuaki Iwashita

IPC分类号： B24B29/00

CPC分类号： B24B37/245

摘要： A polishing apparatus includes a polishing layer formed of forming resin and having a plurality of mechanical polishing particles contained in the polishing layer so as to be partially exposed from a polishing surface thereof. An object to be polished and the polishing layer are rotated relative to each other so that the object is polished with the mechanical polishing particles, in a state in which the object is allowed to contact with the polishing surface of the polishing layer.

摘要翻译： 抛光装置包括由形成树脂形成的抛光层，并且包含在抛光层中的多个机械抛光颗粒以从其抛光表面部分露出。 在物体与研磨层的研磨面接触的状态下，将要抛光的物体和抛光层相对于彼此旋转，从而物体被机械抛光颗粒抛光。

公开(公告)号：US06106369A

公开(公告)日：2000-08-22

申请号：US186885

申请日：1998-11-06

申请人： Nobuo Konishi ,  Mitsuaki Iwashita

发明人： Nobuo Konishi ,  Mitsuaki Iwashita

IPC分类号： B24B37/07 ,  B24B37/10 ,  B24B49/16 ,  B24B57/02 ,  B24B1/00

CPC分类号： B24B49/16 ,  B24B37/04 ,  B24B57/02

摘要： A polishing system comprises: a rotating mounting table 14 which is rotatable while holding an object W to be polished; a rotating polishing plate 28 which has a smaller diameter than that of the rotating mounting table and which is provided with an abrasive layer 30 on the surface thereof; a scanning mechanism 26 for moving the rotating polishing plate in radial directions of the rotating mounting table while pressing the abrasive layer on the object; and abrasive solution supply means 46 for supplying an abrasive solution to the surface of the object. Thus, the system can be decreased in size, and the polished quantity can be partially controlled.

摘要翻译： 抛光系统包括：旋转安装台14，其可旋转，同时保持待抛光的物体W; 具有比旋转安装台的直径小的旋转研磨板28，并且在其表面上设置有研磨层30; 扫描机构26，用于在旋转的安装台的径向方向上移动旋转的抛光板，同时将研磨层按压在物体上; 以及用于将磨料溶液供给到物体表面的磨料溶液供给装置46。 因此，可以减小系统的尺寸，并且可以部分地控制抛光量。

公开(公告)号：US10199240B2

公开(公告)日：2019-02-05

申请号：US13482318

申请日：2012-05-29

申请人： Hidekazu Hayashi ,  Yohei Sato ,  Hisashi Okuchi ,  Hiroshi Tomita ,  Kazuyuki Mitsuoka ,  Mitsuaki Iwashita ,  Takehiko Orii ,  Gen You ,  Hiroki Ohno ,  Takayuki Toshima

发明人： Hidekazu Hayashi ,  Yohei Sato ,  Hisashi Okuchi ,  Hiroshi Tomita ,  Kazuyuki Mitsuoka ,  Mitsuaki Iwashita ,  Takehiko Orii ,  Gen You ,  Hiroki Ohno ,  Takayuki Toshima

IPC分类号： H01L21/67 ,  H01L21/02 ,  B08B7/00

摘要： A substrate processing method and apparatus which can remove an anti-drying liquid, which has entered a three-dimensional pattern with recessed portions formed in a substrate, in a relatively short time. The substrate processing method includes the steps of: carrying a substrate, having a three-dimensional pattern formed in a surface, into a processing container, said pattern being covered with an anti-drying liquid that has entered the recessed portions of the pattern; heating the substrate and supplying a pressurizing gas or a fluid in a high-pressure state into the processing container, thereby forming a high-pressure atmosphere in the processing container before the anti-drying liquid vaporizes to such an extent as to cause pattern collapse and bringing the anti-drying liquid into a high-pressure state while keeping the liquid in the recessed portions of the pattern; and thereafter discharging a fluid in a high-pressure state or a gaseous state from the processing container.

公开(公告)号：US20130019905A1

公开(公告)日：2013-01-24

申请号：US13420870

申请日：2012-03-15

申请人： Linan JI ,  Hidekazu Hayashi ,  Hiroshi Tomita ,  Hisashi Okuchi ,  Yohei Sato ,  Takayuki Toshima ,  Mitsuaki Iwashita ,  Kazuyuki Mitsuoka ,  Gen You ,  Hiroki Ohno ,  Takehiko Orii

发明人： Linan JI ,  Hidekazu Hayashi ,  Hiroshi Tomita ,  Hisashi Okuchi ,  Yohei Sato ,  Takayuki Toshima ,  Mitsuaki Iwashita ,  Kazuyuki Mitsuoka ,  Gen You ,  Hiroki Ohno ,  Takehiko Orii

IPC分类号： B08B3/10 ,  F26B3/00

CPC分类号： H01L21/02 ,  F26B21/10 ,  F26B21/14 ,  F26B23/028 ,  F26B2200/04 ,  H01L21/02052 ,  H01L21/02057 ,  H01L21/02101 ,  H01L21/67034

摘要： According to one embodiment, a supercritical drying method for a semiconductor substrate, comprises introducing the semiconductor substrate into a chamber in a state, a surface of the semiconductor substrate being wet with alcohol, substituting the alcohol on the semiconductor substrate with a supercritical fluid of carbon dioxide by impregnating the semiconductor substrate to the supercritical fluid in the chamber, and discharging the supercritical fluid and the alcohol from the chamber and reducing a pressure inside the chamber. The method further comprises performing a baking treatment by supplying an oxygen gas or an ozone gas to the chamber after the reduction of the pressure inside the chamber.

摘要翻译： 根据一个实施方案，一种用于半导体衬底的超临界干燥方法包括将半导体衬底以一种状态将半导体衬底引入室中，该半导体衬底的表面被醇润湿，用半导体衬底上的醇代替超临界流体碳 通过将半导体衬底浸渍到腔室中的超临界流体中，并且将超临界流体和醇从腔室排出并且减小腔室内的压力，从而将二氧化碳稀释。 该方法还包括在减小室内的压力之后，通过向室内供应氧气或臭氧气体进行烘烤处理。

公开(公告)号：US20120304485A1

公开(公告)日：2012-12-06

申请号：US13482318

申请日：2012-05-29

申请人： Hidekazu Hayashi ,  Yohei Sato ,  Hisashi Okuchi ,  Hiroshi Tomita ,  Kazuyuki Mitsuoka ,  Mitsuaki Iwashita ,  Takehiko Orii ,  Gen You ,  Hiroki Ohno ,  Takayuki Toshima

发明人： Hidekazu Hayashi ,  Yohei Sato ,  Hisashi Okuchi ,  Hiroshi Tomita ,  Kazuyuki Mitsuoka ,  Mitsuaki Iwashita ,  Takehiko Orii ,  Gen You ,  Hiroki Ohno ,  Takayuki Toshima

IPC分类号： F26B7/00

CPC分类号： H01L21/67028 ,  B08B7/0021 ,  H01L21/02057 ,  H01L21/02101

摘要： A substrate processing method and apparatus which can remove an anti-drying liquid, which has entered a three-dimensional pattern with recessed portions formed in a substrate, in a relatively short time. The substrate processing method includes the steps of: carrying a substrate, having a three-dimensional pattern formed in a surface, into a processing container, said pattern being covered with an anti-drying liquid that has entered the recessed portions of the pattern; heating the substrate and supplying a pressurizing gas or a fluid in a high-pressure state into the processing container, thereby forming a high-pressure atmosphere in the processing container before the anti-drying liquid vaporizes to such an extent as to cause pattern collapse and bringing the anti-drying liquid into a high-pressure state while keeping the liquid in the recessed portions of the pattern; and thereafter discharging a fluid in a high-pressure state or a gaseous state from the processing container.

摘要翻译： 一种基板处理方法和装置，其能够在相当短的时间内去除已经进入具有形成在基板中的凹部的三维图案的抗干燥液体。 基板处理方法包括以下步骤：将具有形成在表面上的三维图案的基板运送到处理容器中，所述图案被已经进入图案的凹部的防干燥液体覆盖; 加热基板并将高压状态的加压气体或流体供给到处理容器中，从而在防干燥液体蒸发之前在处理容器中形成高压气氛，使其形成图案塌陷， 将防干燥液体保持在高压状态，同时将液体保持在图案的凹部中; 然后从处理容器中排出处于高压状态或气态的流体。