发明申请
- 专利标题： Method for fabricating semiconductor components with thinned substrate, back side contacts and circuit side contacts
- 专利标题（中）： 用薄化衬底，背面接触和电路侧触点制造半导体器件的方法
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申请号： US10933144申请日： 2004-09-02
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公开(公告)号： US20050029650A1公开(公告)日： 2005-02-10
- 发明人: Alan Wood , Trung Tri Doan
- 申请人： Alan Wood , Trung Tri Doan
- 主分类号： H01L23/48
- IPC分类号： H01L23/48 ; H01L25/065 ; H01L21/44 ; H01L23/02
摘要：
A semiconductor component includes back side pin contacts fabricated using a circuit side fabrication method. The component also includes a thinned semiconductor die having a pattern of die contacts, and conductive members formed by filled openings in the die contacts and the die. In addition, the pin contacts are formed by terminal portions of the conductive members. The fabrication method includes the steps of forming the openings and the conductive members, and then thinning and etching the die to form the pin contacts. An alternate embodiment female component includes female conductive members configured to physically and electrically engage pin contacts on a mating component of a stacked assembly.
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