公开(公告)号：US20050029650A1

公开(公告)日：2005-02-10

申请号：US10933144

申请日：2004-09-02

申请人： Alan Wood ,  Trung Tri Doan

发明人： Alan Wood ,  Trung Tri Doan

IPC分类号： H01L23/48 ,  H01L25/065 ,  H01L21/44 ,  H01L23/02

CPC分类号： H01L23/3114 ,  H01L21/76831 ,  H01L21/76898 ,  H01L23/481 ,  H01L24/11 ,  H01L24/13 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/05001 ,  H01L2224/05009 ,  H01L2224/05172 ,  H01L2224/0557 ,  H01L2224/05572 ,  H01L2224/1134 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2224/16 ,  H01L2225/06541 ,  H01L2225/06586 ,  H01L2924/0001 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/1433 ,  Y10S438/977 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05655 ,  H01L2224/05666 ,  H01L2224/05671 ,  H01L2224/05681 ,  H01L2224/05684 ,  H01L2224/05111 ,  H01L2224/05124 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05164 ,  H01L2224/05166 ,  H01L2224/05169 ,  H01L2224/05184

摘要： A semiconductor component includes back side pin contacts fabricated using a circuit side fabrication method. The component also includes a thinned semiconductor die having a pattern of die contacts, and conductive members formed by filled openings in the die contacts and the die. In addition, the pin contacts are formed by terminal portions of the conductive members. The fabrication method includes the steps of forming the openings and the conductive members, and then thinning and etching the die to form the pin contacts. An alternate embodiment female component includes female conductive members configured to physically and electrically engage pin contacts on a mating component of a stacked assembly.

摘要翻译： 半导体部件包括使用电路侧制造方法制造的后侧引脚触点。 该部件还包括具有模接触图案的薄化半导体管芯，以及由管芯接触件和管芯中的填充开口形成的导电部件。 此外，引脚触点由导电构件的端子部分形成。 制造方法包括形成开口和导电构件的步骤，然后使模具变薄和蚀刻以形成引脚触点。 替代实施例的阴部件包括阴导电部件，其被配置为物理地和电接合堆叠组件的配合部件上的销触点。

公开(公告)号：US20060154446A1

公开(公告)日：2006-07-13

申请号：US11371766

申请日：2006-03-09

申请人： Alan Wood ,  Trung Tri Doan

发明人： Alan Wood ,  Trung Tri Doan

IPC分类号： H01L21/44

CPC分类号： H01L23/3114 ,  H01L21/76831 ,  H01L21/76898 ,  H01L23/481 ,  H01L24/11 ,  H01L24/13 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/05001 ,  H01L2224/05009 ,  H01L2224/05172 ,  H01L2224/0557 ,  H01L2224/05572 ,  H01L2224/1134 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2224/16 ,  H01L2225/06541 ,  H01L2225/06586 ,  H01L2924/0001 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/1433 ,  Y10S438/977 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05655 ,  H01L2224/05666 ,  H01L2224/05671 ,  H01L2224/05681 ,  H01L2224/05684 ,  H01L2224/05111 ,  H01L2224/05124 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05164 ,  H01L2224/05166 ,  H01L2224/05169 ,  H01L2224/05184

摘要： A semiconductor component includes back side pin contacts fabricated using a circuit side fabrication method. The component also includes a thinned semiconductor die having a pattern of die contacts, and conductive members formed by filled openings in the die contacts and the die. In addition, the pin contacts are formed by terminal portions of the conductive members. The fabrication method includes the steps of forming the openings and the conductive members, and then thinning and etching the die to form the pin contacts. An alternate embodiment female component includes female conductive members configured to physically and electrically engage pin contacts on a mating component of a stacked assembly.

摘要翻译： 半导体部件包括使用电路侧制造方法制造的后侧引脚触点。 该部件还包括具有模接触图案的薄化半导体管芯，以及由管芯接触件和管芯中的填充开口形成的导电部件。 此外，引脚触点由导电构件的端子部分形成。 制造方法包括形成开口和导电构件的步骤，然后使模具变薄和蚀刻以形成引脚触点。 替代实施例的阴部件包括阴导电部件，其被配置为物理地和电接合堆叠组件的配合部件上的销触点。

公开(公告)号：US20060275949A1

公开(公告)日：2006-12-07

申请号：US11496180

申请日：2006-07-31

申请人： Warren Farnworth ,  Alan Wood ,  Trung Tri Doan

发明人： Warren Farnworth ,  Alan Wood ,  Trung Tri Doan

IPC分类号： H01L21/00

CPC分类号： H01L23/48 ,  B33Y70/00 ,  B33Y80/00 ,  H01L21/304 ,  H01L21/3043 ,  H01L21/56 ,  H01L21/561 ,  H01L21/565 ,  H01L21/568 ,  H01L21/6835 ,  H01L21/6836 ,  H01L21/76802 ,  H01L21/76898 ,  H01L21/78 ,  H01L23/24 ,  H01L23/3114 ,  H01L23/36 ,  H01L23/3672 ,  H01L23/481 ,  H01L23/49531 ,  H01L23/49575 ,  H01L24/05 ,  H01L24/11 ,  H01L24/12 ,  H01L24/16 ,  H01L24/27 ,  H01L24/94 ,  H01L24/96 ,  H01L25/105 ,  H01L25/50 ,  H01L29/0657 ,  H01L2221/68327 ,  H01L2221/68331 ,  H01L2221/68372 ,  H01L2224/0401 ,  H01L2224/05599 ,  H01L2224/11849 ,  H01L2224/11901 ,  H01L2224/12105 ,  H01L2224/13009 ,  H01L2224/13022 ,  H01L2224/13025 ,  H01L2224/13099 ,  H01L2224/16 ,  H01L2224/16235 ,  H01L2224/274 ,  H01L2224/73104 ,  H01L2224/73253 ,  H01L2224/94 ,  H01L2225/06541 ,  H01L2225/1035 ,  H01L2225/1058 ,  H01L2225/107 ,  H01L2225/1094 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/05042 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2224/29099 ,  H01L2224/27

摘要： A semiconductor component includes a thinned semiconductor substrate having protective polymer layers on up to six surfaces. The component also includes contacts on a circuit side of the substrate, conductive vias in electrical contact with the contacts, aNd conductors on a backside of the substrate. A method for fabricating the component includes the steps of providing the semiconductor substrate with the contacts on the circuit side, forming conductive vias from the back side in electrical contact with the contacts, and forming conductors on the backside.

摘要翻译： 半导体部件包括在多达六个表面上具有保护性聚合物层的变薄的半导体衬底。 该部件还包括在基板的电路侧的触点，与触点电接触的导电通孔，在基板的背面上的一个导体。 一种制造该部件的方法包括以下步骤：在电路侧提供半导体衬底上的触点，从背面形成与触点电接触的导电通孔，并在背面形成导体。

公开(公告)号：US08933467B2

公开(公告)日：2015-01-13

申请号：US13309718

申请日：2011-12-02

申请人： Trung Tri Doan ,  Tien Wei Tan ,  Wen-Huang Liu ,  Chen-Fu Chu ,  Yung Wei Chen

发明人： Trung Tri Doan ,  Tien Wei Tan ,  Wen-Huang Liu ,  Chen-Fu Chu ,  Yung Wei Chen

IPC分类号： H01L31/12 ,  H01L25/16

CPC分类号： H01L25/167 ,  H01L2224/48091 ,  H01L2224/48464 ,  H01L2224/73265 ,  H01L2924/12032 ,  H01L2924/13033 ,  H01L2924/13091 ,  H01L2924/00014 ,  H01L2924/00

摘要： A light emitting diode (LED) system includes a substrate, an application specific integrated circuit (ASIC), and at least one light emitting diode (LED) that includes a Group-III nitride based material such as GaN, InGaN, AlGaN, AlInGaN or other (Ga, In or Al) N-based materials. The light emitting diode (LED) system can also include a polymer lens, and a phosphor layer on the lens or light emitting diode (LED) for producing white light. In addition, multiple light emitting diodes (LEDs) can be mounted on the substrate, and can have different colors for smart color control lighting. The substrate and the application specific integrated circuit (ASIC) are configured to provide an integrated LED circuit having smart functionality. In addition, the substrate is configured to compliment and expand the functions of the application specific integrated circuit (ASIC), and can also include built in integrated circuits for performing additional electrical functions.

摘要翻译： 发光二极管（LED）系统包括衬底，专用集成电路（ASIC）和至少一个发光二极管（LED），其包括III族氮化物基材料，例如GaN，InGaN，AlGaN，AlInGaN或 其他（Ga，In或Al）N基材料。 发光二极管（LED）系统还可以包括聚合物透镜和用于产生白光的透镜或发光二极管（LED）上的荧光体层。 此外，多个发光二极管（LED）可以安装在基板上，并且可以具有用于智能色彩控制照明的不同颜色。 衬底和专用集成电路（ASIC）被配置为提供具有智能功能的集成LED电路。 此外，衬底被配置为补充和扩展专用集成电路（ASIC）的功能，并且还可以包括用于执行附加电功能的内置集成电路。

公开(公告)号：US08283652B2

公开(公告)日：2012-10-09

申请号：US12845007

申请日：2010-07-28

申请人： Chen-Fu Chu ,  Feng-Hsu Fan ,  Hao-Chun Cheng ,  Trung Tri Doan

发明人： Chen-Fu Chu ,  Feng-Hsu Fan ,  Hao-Chun Cheng ,  Trung Tri Doan

IPC分类号： H01L33/04

CPC分类号： H01L33/38 ,  H01L33/32 ,  H01L33/405 ,  H01L33/44 ,  H01L33/641 ,  H01L33/647

摘要： A vertical light emitting diode (VLED) die includes a metal base; a mirror on the metal base; a p-type semiconductor layer on the reflector layer; a multiple quantum well (MQW) layer on the p-type semiconductor layer configured to emit light; and an n-type semiconductor layer on the multiple quantum well (MQW) layer. The vertical light emitting diode (VLED) die also includes an electrode and an electrode frame on the n-type semiconductor layer, and an organic or inorganic material contained within the electrode frame. The electrode and the electrode frame are configured to provide a high current capacity and to spread current from the outer periphery to the center of the n-type semiconductor layer. The vertical light emitting diode (VLED) die can also include a passivation layer formed on the metal base surrounding and electrically insulating the electrode frame, the edges of the mirror, the edges of the p-type semiconductor layer, the edges of the multiple quantum well (MQW) layer and the edges of the n-type semiconductor layer.

摘要翻译： 垂直发光二极管（VLED）模具包括金属基底; 金属底座上的镜子; 反射层上的p型半导体层; 配置成发光的p型半导体层上的多量子阱（MQW）层; 和多量子阱（MQW）层上的n型半导体层。 垂直发光二极管（VLED）裸片还包括在n型半导体层上的电极和电极框架，以及包含在电极框架内的有机或无机材料。 电极和电极框架被配置为提供高电流容量并且将电流从外周延伸到n型半导体层的中心。 垂直发光二极管（VLED）裸片还可以包括形成在金属基底上的钝化层，该钝化层围绕并电绝缘电极框架，反射镜的边缘，p型半导体层的边缘，多个量子的边缘 （MQW）层和n型半导体层的边缘。

公开(公告)号：US20120091466A1

公开(公告)日：2012-04-19

申请号：US13309718

申请日：2011-12-02

申请人： Trung Tri Doan ,  Tien Wei Tan ,  Wen-Huang Liu ,  Chen-Fu Chu ,  Yung Wei Chen

发明人： Trung Tri Doan ,  Tien Wei Tan ,  Wen-Huang Liu ,  Chen-Fu Chu ,  Yung Wei Chen

IPC分类号： H01L33/08 ,  H01L33/32

CPC分类号： H01L25/167 ,  H01L2224/48091 ,  H01L2224/48464 ,  H01L2224/73265 ,  H01L2924/12032 ,  H01L2924/13033 ,  H01L2924/13091 ,  H01L2924/00014 ,  H01L2924/00

摘要： A light emitting diode (LED) system includes a substrate, an application specific integrated circuit (ASIC), and at least one light emitting diode (LED) that includes a Group-III nitride based material such as GaN, InGaN, AlGaN, AlInGaN or other (Ga, In or Al) N-based materials. The light emitting diode (LED) system can also include a polymer lens, and a phosphor layer on the lens or light emitting diode (LED) for producing white light. In addition, multiple light emitting diodes (LEDs) can be mounted on the substrate, and can have different colors for smart color control lighting. The substrate and the application specific integrated circuit (ASIC) are configured to provide an integrated LED circuit having smart functionality. In addition, the substrate is configured to compliment and expand the functions of the application specific integrated circuit (ASIC), and can also include built in integrated circuits for performing additional electrical functions.

摘要翻译： 发光二极管（LED）系统包括衬底，专用集成电路（ASIC）和至少一个发光二极管（LED），其包括III族氮化物基材料，例如GaN，InGaN，AlGaN，AlInGaN或 其他（Ga，In或Al）N基材料。 发光二极管（LED）系统还可以包括聚合物透镜和用于产生白光的透镜或发光二极管（LED）上的荧光体层。 此外，多个发光二极管（LED）可以安装在基板上，并且可以具有用于智能色彩控制照明的不同颜色。 衬底和专用集成电路（ASIC）被配置为提供具有智能功能的集成LED电路。 此外，衬底被配置为补充和扩展专用集成电路（ASIC）的功能，并且还可以包括用于执行附加电功能的内置集成电路。

公开(公告)号：US08124454B1

公开(公告)日：2012-02-28

申请号：US11548629

申请日：2006-10-11

申请人： Chen-Fu Chu ,  Trung Tri Doan ,  Chuong Anh Tran ,  Chao-Chen Cheng ,  Jiunn-Yi Chu ,  Wen-Huang Liu ,  Hao-Chun Cheng ,  Feng-Hsu Fan ,  Jui-Kang Yen

发明人： Chen-Fu Chu ,  Trung Tri Doan ,  Chuong Anh Tran ,  Chao-Chen Cheng ,  Jiunn-Yi Chu ,  Wen-Huang Liu ,  Hao-Chun Cheng ,  Feng-Hsu Fan ,  Jui-Kang Yen

IPC分类号： H01L21/00

CPC分类号： H01L33/0079 ,  H01L33/0095 ,  H01L33/44 ,  H01L33/46 ,  H01S5/0201 ,  H01S5/0217 ,  H01S5/32341

摘要： Techniques for fabricating metal devices, such as vertical light-emitting diode (VLED) devices, power devices, laser diodes, and vertical cavity surface emitting laser devices, are provided. Devices produced accordingly may benefit from greater yields and enhanced performance over conventional metal devices, such as higher brightness of the light-emitting diode and increased thermal conductivity. Moreover, the invention discloses techniques in the fabrication arts that are applicable to GaN-based electronic devices in cases where there is a high heat dissipation rate of the metal devices that have an original non- (or low) thermally conductive and/or non- (or low) electrically conductive carrier substrate that has been removed.

摘要翻译： 提供了用于制造金属器件的技术，例如垂直发光二极管（VLED）器件，功率器件，激光二极管和垂直腔表面发射激光器件。 相应地生产的器件可以比常规金属器件更高的产量和更高的性能受益，例如发光二极管的较高的亮度和增加的导热性。 此外，本发明公开了在具有原始非导热和/或非导电性的金属器件的高散热率的情况下适用于GaN基电子器件的制造技术中的技术。 （或低）导电载体衬底。

公开(公告)号：US20110217799A1

公开(公告)日：2011-09-08

申请号：US13109687

申请日：2011-05-17

申请人： Chen-Fu Chu ,  Trung Tri Doan ,  Hao-Chun Cheng ,  Feng-Hsu Fan ,  Fu-Hsien Wang

发明人： Chen-Fu Chu ,  Trung Tri Doan ,  Hao-Chun Cheng ,  Feng-Hsu Fan ,  Fu-Hsien Wang

IPC分类号： H01L21/786

CPC分类号： H01L33/0079 ,  H01L33/0095

摘要： A method for the separation of multiple dies during semiconductor fabrication is described. On an upper surface of a semiconductor wafer containing multiple dies, metal layers are deposited everywhere except where a block of stop electroplating material exists. The stop electroplating material is obliterated, and a barrier layer is formed above the entire remaining structure. A sacrificial metal element is added above the barrier layer, and then the substrate is removed. After the semiconductor material between the individual dies is eradicated, any desired bonding pads and patterned circuitry are added to the semiconductor surface opposite the sacrificial metal element, a passivation layer is added to this surface, and then the sacrificial metal element is removed. Tape is added to the now exposed barrier layer, the passivation layer is removed, the resulting structure is flipped over, and the tape is expanded to separate the individual dies.

摘要翻译： 描述了在半导体制造期间分离多个管芯的方法。 在包含多个模具的半导体晶片的上表面上，除了存在一块停止电镀材料之外，金属层被沉积​​。 停止电镀材料被消除，并且在整个剩余结构上方形成阻挡层。 在阻挡层上方添加牺牲金属元素，然后去除衬底。 在消除各个管芯之间的半导体材料之后，将任何期望的接合焊盘和图案化电路添加到与牺牲金属元件相对的半导体表面，在该表面上添加钝化层，然后去除牺牲金属元件。 将胶带添加到现在暴露的阻挡层中，去除钝化层，将所得结构翻转，并且将带扩展以分离各个模具。

公开(公告)号：US20100264432A1

公开(公告)日：2010-10-21

申请号：US12690828

申请日：2010-01-20

申请人： Wen-Huang Liu ,  Trung Tri Doan ,  Chuong Ahn Tran

发明人： Wen-Huang Liu ,  Trung Tri Doan ,  Chuong Ahn Tran

IPC分类号： H01L33/00

CPC分类号： H01L25/0753 ,  H01L33/44 ,  H01L33/50 ,  H01L33/54 ,  H01L33/56 ,  H01L2224/48091 ,  H01L2224/8592 ,  H01L2924/0002 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： A light emitting device comprises two light-emitting diode (LED) groups, a group of luminophor layers, and an input terminal. The first LED group includes at least one blue LED emitting light having a dominant wavelength in a range between 400 nm and 480 nm, and the second LED group includes at least one red-orange LED emitting light having a dominant wavelength in a range between 610 nm and 630 nm. The group of luminophor layers, which are selected from one of silicates, nitrides, and nitrogen oxides, are positioned above the first LED group and partially converts the light emitted by the first LED group into light having a dominant wavelength in a range between 500 nm and 555 nm. The input terminal is connected to the two LED groups for providing desired electric energy thereto.

摘要翻译： 发光器件包括两个发光二极管（LED）组，一组发光体层和一个输入端子。 第一LED组包括至少一个主要波长在400nm和480nm之间的蓝色LED发光，并且第二LED组包括至少一个红色 - 橙色LED发光，其主波长在610 nm和630nm。 选自硅酸盐，氮化物和氮氧化物之一的发光体层组位于第一LED组上方，并且将由第一LED组发射的光部分地转换成具有主波长的光在500nm 和555nm。 输入端子连接到两个LED组，用于向其提供所需的电能。

公开(公告)号：US07465406B2

公开(公告)日：2008-12-16

申请号：US11448996

申请日：2006-06-07

申请人： Guy T. Blalock ,  Trung Tri Doan

发明人： Guy T. Blalock ,  Trung Tri Doan

IPC分类号： H01L21/302

CPC分类号： H01J37/3222 ,  H01J37/32192 ,  H01Q1/366

摘要： In certain implementations, methods and apparatus include an antenna assembly having at least two overlapping and movable surface microwave plasma antennas. The antennas have respective pluralities of microwave transmissive openings formed therethrough. At least some of the openings of the respective antennas overlap with at least some of the openings of another antenna, and form an effective plurality of microwave transmissive openings through the antenna assembly. Microwave energy is passed through the effective plurality of openings of the antenna assembly and to a flowing gas effective to form a surface microwave plasma onto a substrate received within the processing chamber. At least one of the antennas is moved relative to another of the antennas to change at least one of size and shape of the effective plurality of openings through the antenna assembly effective to modify microwave energy passed through the antenna assembly to the substrate.

摘要翻译： 在某些实施方案中，方法和装置包括具有至少两个重叠和可移动的表面微波等离子体天线的天线组件。 天线具有通过其形成的相应的多个微波透射开口。 各个天线的至少一些开口与另一个天线的至少一些开口重叠，并且通过天线组件形成有效的多个微波透射开口。 微波能量通过天线组件的有效多个开口并流过有效地将表面微波等离子体形成在接收在处理室内的衬底上的流动气体。 天线中的至少一个相对于另一个天线移动，以通过天线组件改变有效多个开口的尺寸和形状中的至少一个，其有效地将通过天线组件的微波能量修改到衬底。