Invention Application
- Patent Title: Negative voltage generator for a semiconductor memory device
- Patent Title (中): 用于半导体存储器件的负电压发生器
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Application No.: US10940804Application Date: 2004-08-26
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Publication No.: US20050030086A1Publication Date: 2005-02-10
- Inventor: Jae-Yoon Sim , Jei-Hwan Yoo
- Applicant: Jae-Yoon Sim , Jei-Hwan Yoo
- Applicant Address: KR Suwon-city
- Assignee: Samsung electronic Co., Ltd.
- Current Assignee: Samsung electronic Co., Ltd.
- Current Assignee Address: KR Suwon-city
- Main IPC: G11C5/14
- IPC: G11C5/14 ; G11C16/30 ; H02M3/07 ; G11C8/00

Abstract:
A negative voltage generator is controlled responsive to a word line precharge signal. Voltage fluctuations in a negatively biased word line scheme are reduced by using a kicker circuit to provide a predetermined amount of negative charge to shut off a word line during a precharge operation. The negative voltage generator includes first and second negative charge pumps. The second charge pump is activated responsive to the word line precharge signal. A negative voltage regulator can be used to regulate a negative voltage signal. A level shifter uses two voltage dividers and a differential amplifier to reduce response time, output ripple, and sensitivity to process and temperature variations. A negative voltage regulator cancels ripple from a charge pump to provide a stable negative bias voltage and reduce the amount of charge needed to precharge a word line.
Public/Granted literature
- US07023262B2 Negative voltage generator for a semiconductor memory device Public/Granted day:2006-04-04
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