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发明申请
US20050031837A1 Thick film dielectric compositions for use on aluminum nitride substrates 失效
用于氮化铝衬底的厚膜电介质组合物

Thick film dielectric compositions for use on aluminum nitride substrates
摘要：
The present invention relates to a Cd-free and Pb-free glass composition comprising, based in mol %, 1-10% MO where M is selected from Ba, Sr, Ca and mixtures thereof, 5-30% MgO, 0.3-5% CuO, 0-2.5% P2O5, 0-2.5% ZrO2, 24-45% ZnO, 2-10% Al2O3, 35-50% SiO2 and 0.1-3% A2O where A is selected from the group of alkali elements and mixtures thereof wherein the glass composition is useful in thick paste dielectric materials which are compatible with AlN substrates.
摘要（中）：

本发明涉及一种无镉和无铅玻璃组合物，其包含基于摩尔％的1-10％MO，其中M选自Ba，Sr，Ca及其混合物，5-30％MgO，0.3-5 ％CuO，0-2.5％P 2 O 5，0-2.5％ZrO 2，24-45％ZnO，2-10％Al 2 O 3，35-50％SiO 2和0.1 -3％A 2 O，其中A选自碱元素和混合物 其中所述玻璃组合物可用于与AlN基底相容的厚糊状电介质材料。

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