Invention Application
US20050032374A1 Process for defining a chalcogenide material layer, in particular in a process for manufacturing phase change memory cells
有权
用于限定硫族化物材料层的方法，特别是用于制造相变存储器单元的方法
- Patent Title: Process for defining a chalcogenide material layer, in particular in a process for manufacturing phase change memory cells
- Patent Title (中): 用于限定硫族化物材料层的方法，特别是用于制造相变存储器单元的方法
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Application No.: US10837491Application Date: 2004-04-30
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Publication No.: US20050032374A1Publication Date: 2005-02-10
- Inventor: Alessandro Spandre
- Applicant: Alessandro Spandre
- Applicant Address: IT Agrate Brianza US ID Boise
- Assignee: STMicroelectronics S.r.l.,OVONYX Inc.
- Current Assignee: STMicroelectronics S.r.l.,OVONYX Inc.
- Current Assignee Address: IT Agrate Brianza US ID Boise
- Priority: EP03425293.2 20030507
- Main IPC: C23F4/00
- IPC: C23F4/00 ; H01L45/00 ; H01L21/302 ; H01L21/461
Abstract:
A process for defining a chalcogenide material layer using a chlorine based plasma and a mask, wherein the portions of the chalcogenide material layer that are not covered by the mask are etched away. In a phase change memory cell having a stack of a chalcogenide material layer and an AlCu layer, the AlCu layer is etched first using a chlorine based plasma at a higher temperature; then the lateral walls of the AlCu layer are passivated; and then the chalcogenide material layer is etched at a lower temperature.
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