Invention Application
- Patent Title: Structure and method of a strained channel transistor and a second semiconductor component in an integrated circuit
- Patent Title (中): 集成电路中的应变通道晶体管和第二半导体元件的结构和方法
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Application No.: US10729095Application Date: 2003-12-05
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Publication No.: US20050035409A1Publication Date: 2005-02-17
- Inventor: Chih-Hsin Ko , Wen-Chin Lee , Yee-Chia Yeo , Chun-Chieh Lin , Chenming Hu
- Applicant: Chih-Hsin Ko , Wen-Chin Lee , Yee-Chia Yeo , Chun-Chieh Lin , Chenming Hu
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L21/8238 ; H01L27/01 ; H01L29/78
Abstract:
A semiconductor chip includes a semiconductor substrate 126, in which first and second active regions are disposed. A resistor 124 is formed in the first active region and the resistor 124 includes a doped region 128 formed between two terminals 136. A strained channel transistor 132 is formed in the second active region. The transistor includes a first and second stressor 141, formed in the substrate oppositely adjacent a strained channel region 143.
Public/Granted literature
Information query
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