发明申请
- 专利标题： Method for implanting ions into semiconductor substrate
- 专利标题（中）： 将离子注入半导体衬底的方法
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申请号： US10918515申请日： 2004-08-12
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公开(公告)号： US20050037600A1公开(公告)日： 2005-02-17
- 发明人: Fujio Masuoka , Shinji Horii , Takuji Tanigami , Takashi Yokoyama
- 申请人： Fujio Masuoka , Shinji Horii , Takuji Tanigami , Takashi Yokoyama
- 申请人地址： JP Sendai-shi JP Osaka-shi
- 专利权人： FUJIO MASUOKA,SHARP KABUSHIKI KAISHA
- 当前专利权人： FUJIO MASUOKA,SHARP KABUSHIKI KAISHA
- 当前专利权人地址： JP Sendai-shi JP Osaka-shi
- 优先权： JP2003-207346 20030812
- 主分类号： H01L21/265
- IPC分类号： H01L21/265 ; H01L21/8247 ; H01L27/115 ; H01L29/788 ; H01L29/792 ; H01L21/00 ; H01L21/425
摘要：
An ion implantation method for implanting ions into a side wall of a protruded semiconductor layer from a semiconductor substrate, the method includes applying an electric field to accelerate the ions in one direction and applying a magnetic field parallel to a plane extending at a predetermined angle with respect to the one direction, thereby controlling a direction of the ion implantation to the side wall.
公开/授权文献
- US07060598B2 Method for implanting ions into semiconductor substrate 公开/授权日：2006-06-13
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