发明申请
- 专利标题: Deep filled vias
- 专利标题(中): 深填充的通孔
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申请号: US10639989申请日: 2003-08-13
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公开(公告)号: US20050037608A1公开(公告)日: 2005-02-17
- 发明人: Panayotis Andricacos , Emanuel Cooper , Timothy Dalton , Hariklia Deligianni , Daniel Guidotti , Keith Kwietniak , Michelle Steen , Cornelia Tsang
- 申请人: Panayotis Andricacos , Emanuel Cooper , Timothy Dalton , Hariklia Deligianni , Daniel Guidotti , Keith Kwietniak , Michelle Steen , Cornelia Tsang
- 专利权人: IBM
- 当前专利权人: IBM
- 主分类号: H01L21/288
- IPC分类号: H01L21/288 ; H01L21/3065 ; H01L21/4763 ; H01L21/768
摘要:
Flared and non-flared metallized deep vias having aspect ratios of about 2 or greater are provided. Blind vias have been fabricated in silicon substrates up to a depth of about 300 microns, and flared through vias have been fabricated up to about 750 microns, the approximate thickness of a silicon substrate wafer, enabling the formation of electrical connections at either or both ends of a via. In spite of the depth and high aspect ratios attainable, the etched vias are completely filled with plated copper conductor, completing the formation of deep vias and allowing fuller use of both sides of the substrate.
公开/授权文献
- US07060624B2 Deep filled vias 公开/授权日:2006-06-13