发明申请
US20050038261A1 Bismide compound, acid generator and resist composition each containing the same, and method of forming pattern from the composition
失效
每种含有相同的Bismide化合物，酸产生剂和抗蚀剂组合物以及从组合物形成图案的方法
- 专利标题： Bismide compound, acid generator and resist composition each containing the same, and method of forming pattern from the composition
- 专利标题（中）： 每种含有相同的Bismide化合物，酸产生剂和抗蚀剂组合物以及从组合物形成图案的方法
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申请号： US10496014申请日： 2002-11-28
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公开(公告)号： US20050038261A1公开(公告)日： 2005-02-17
- 发明人: Tsuneaki Maesawa , Fumiyoshi Urano , Masayuki Endo , Masaru Sasago
- 申请人： Tsuneaki Maesawa , Fumiyoshi Urano , Masayuki Endo , Masaru Sasago
- 优先权： JP2001-366005 20011130; JP2002-120769 20020423
- 国际申请： PCT/JP02/12434 WO 20021128
- 主分类号： C07D209/48
- IPC分类号： C07D209/48 ; C07D487/04 ; G03F7/004 ; G03F7/038 ; G03F7/039 ; C07D43/02
摘要：
The present invention relates to a novel bisimide compound useful as an acid generator for a chemically amplified resist composition used in manufacturing of semiconductor element and the like or a raw material for synthesizing heat resistant polymers, an acid generator and a resist composition using said compound and a method for pattern formation using said composition, and further relates to a synthetic n intermediate for a bisimide compound and a bis(N-hydroxy)phthalimide compound useful as an intermediate for a functional compound such as a heat resistant polymer or photosensitive material, and provides a bisimide compound shown by the general formula [1]: (wherein R and A1 are as defined in claim 1.)
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