发明申请
- 专利标题： Natural-superlattice homologous single crystal thin film, method for preparation thereof, and device using said single crystal thin film
- 专利标题（中）： 天然超晶格同源单晶薄膜，其制备方法和使用所述单晶薄膜的器件
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申请号： US10494247申请日： 2002-10-31
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公开(公告)号： US20050039670A1公开(公告)日： 2005-02-24
- 发明人: Hideo Hosono , Hiromichi Ota , Masahiro Orita , Kazushige Ueda , Masahiro Hirano , Toshio Kamiya
- 申请人： Hideo Hosono , Hiromichi Ota , Masahiro Orita , Kazushige Ueda , Masahiro Hirano , Toshio Kamiya
- 优先权： JP2001-340066 20011105; JP2002-266012 20020911
- 国际申请： PCT/JP02/11404 WO 20021031
- 主分类号： C30B23/02
- IPC分类号： C30B23/02 ; H01L21/336 ; H01L29/45 ; H01L29/49 ; H01L29/786 ; C30B1/00
摘要：
Disclosed is a natural-superlattice homologous single-crystal thin film, which comprises a complex oxide which is epitaxially grown on either one of a ZnO epitaxial thin film formed on a single-crystal substrate, the single-crystal substrate after disappearance of the ZnO epitaxial thin film and a ZnO single crystal. The complex oxide is expressed by the a formula: M1M2O3 (ZnO)m, wherein M1 is at least one selected from the group consisting of Ga, Fe, Sc, In, Lu, Yb, Tm, Er, Ho and Y, M2 is at least one selected from the group consisting of Mn, Fe, Ga, In and Al, and m is a natural number of 1 or more. A natural-superlattice homologous single-crystal thin film formed by depositing the complex oxide and subjecting the obtained layered film to a thermal anneal treatment can be used in optimal devices, electronic devices and X-ray optical devices.