发明申请
- 专利标题： Capacitors of semiconductor devices and methods of fabricating the same
- 专利标题（中）： 半导体器件的电容器及其制造方法
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申请号： US10758346申请日： 2004-01-15
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公开(公告)号： US20050040492A1公开(公告)日： 2005-02-24
- 发明人: Jeong Park
- 申请人： Jeong Park
- 优先权： KR10-2003-0056962 20030818
- 主分类号： H01L21/8242
- IPC分类号： H01L21/8242 ; H01L21/02 ; H01L21/314 ; H01L21/20 ; H01L29/00
摘要：
Capacitors of semiconductor devices and methods of fabricating the same are disclosed. An example capacitor-fabricating method comprises: forming a first insulating layer by nitrifying a semiconductor substrate; forming a second insulating layer by depositing a transition element on the first insulating layer and performing a reoxidation process; forming a third insulating layer by nitrifying the second insulating layer using a forming gas; and forming a conducting layer on top of the third insulating layer.
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