Invention Application
- Patent Title: Circuit and method for ESD protection
- Patent Title (中): 电路和ESD保护方法
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Application No.: US10644718Application Date: 2003-08-20
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Publication No.: US20050041346A1Publication Date: 2005-02-24
- Inventor: Yi-Hsun Wu , Jian-Hsing Lee
- Applicant: Yi-Hsun Wu , Jian-Hsing Lee
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Main IPC: H01L23/60
- IPC: H01L23/60 ; H01L27/02 ; H02H9/00

Abstract:
A sensor for electrostatic discharge (ESD) protection includes a voltage divider and a device coupled thereto. The sensor is coupled to an input terminal of the sensor, wherein a voltage drop occurs across the voltage divider and a high state voltage is generated at an output terminal of the sensor when an ESD voltage pulse is applied to the input terminal of the sensor. The device maintains the high state voltage at the output terminal of the sensor, while the ESD voltage pulse is applied to the input terminal of the sensor. A method for ESD protection includes the step of pulling down a gate terminal of a MOS transistor of an ESD circuit to a low state voltage when an ESD pulse is sensed.
Public/Granted literature
- US07583484B2 Circuit and method for ESD protection Public/Granted day:2009-09-01
Information query
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