Invention Application
- Patent Title: Semiconductor memory device
- Patent Title (中): 半导体存储器件
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Application No.: US10920249Application Date: 2004-08-18
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Publication No.: US20050041520A1Publication Date: 2005-02-24
- Inventor: Hiroyuki Takahashi , Takuya Hirota
- Applicant: Hiroyuki Takahashi , Takuya Hirota
- Applicant Address: JP Kawasaki
- Assignee: NEC Electronics Corporation
- Current Assignee: NEC Electronics Corporation
- Current Assignee Address: JP Kawasaki
- Priority: JP2003-298546 20030822
- Main IPC: G11C8/18
- IPC: G11C8/18 ; G11C11/403 ; G11C11/406 ; G11C11/407 ; G11C7/00 ; G11C8/00

Abstract:
A semiconductor memory device adapted for avoiding collision between the selection period of a word line for a refresh and the selection period of a word line for a read/write, comprises a cell array including a plurality of memory cells that require refreshing for retention of storage data and means for exercising control so that when a read/write request is input in a clock cycle following a clock cycle for performing a refresh operation, a read/write operation in the cell array is delayed by at least one clock cycle, and the read/write operation is started after completion of the refresh.
Public/Granted literature
- US07054223B2 Semiconductor memory device Public/Granted day:2006-05-30
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