发明申请
- 专利标题： Method for manufacturing differential isolation structures in a semiconductor electronic device and corresponding structure
- 专利标题（中）： 半导体电子器件中的差分隔离结构的制造方法及其结构
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申请号： US10890529申请日： 2004-07-12
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公开(公告)号： US20050042812A1公开(公告)日： 2005-02-24
- 发明人: Daniela Brazzelli , Livio Baldi , Giorgio Servalli
- 申请人： Daniela Brazzelli , Livio Baldi , Giorgio Servalli
- 优先权： EP03425459.9 20030711
- 主分类号： H01L21/762
- IPC分类号： H01L21/762 ; H01L21/8238
摘要：
Embodiments of this invention relate to a method for manufacturing isolation structures with different depths in a monolithically integrated semiconductor electronic device. An inventive method according to an embodiment of the invention comprises a first step of defining active areas on a semiconductor material substrate, a second step of forming isolation structures by realising trenches in said substrate and then filling them with field oxide, a third step of defining lithographically at least a first device area, and a fourth step of realising a digging in the substrate and in the field oxide of said first device area.