发明申请
- 专利标题： Compound semiconductor multilayer structure, hall device, and hall device manufacturing method
- 专利标题（中）： 复合半导体多层结构，霍尔器件和霍尔器件制造方法
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申请号： US10501349申请日： 2003-01-15
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公开(公告)号： US20050042814A1公开(公告)日： 2005-02-24
- 发明人: Takayuki Watanabe , Yoshihiko Shibata , Tsuyoshi Ujihara , Takashi Yoshida , Akihiko Oyama
- 申请人： Takayuki Watanabe , Yoshihiko Shibata , Tsuyoshi Ujihara , Takashi Yoshida , Akihiko Oyama
- 优先权： JP2002-6670 20020115
- 国际申请： PCT/JP03/00291 WO 20030115
- 主分类号： G01R33/07
- IPC分类号： G01R33/07 ; H01L29/201 ; H01L29/205 ; H01L43/06 ; H01L43/14 ; H01L21/8238
摘要：
Hall device is provided by enabling stable provision of a quantum well compound semiconductor stacked structure. It has first and second compound semiconductor layers composed of Sb and at least two of five elements of Al, Ga, In, As and P, and an active layer composed of InxGa1-x,AsySb1-y (0.8≦x≦1.0, 0.8
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