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    Compound semiconductor multilayer structure, hall device, and hall device manufacturing method
    1.
    发明授权
    Compound semiconductor multilayer structure, hall device, and hall device manufacturing method 有权
    复合半导体多层结构，霍尔器件和霍尔器件制造方法

    公开(公告)号：US07388268B2

    公开(公告)日：2008-06-17

    申请号：US10501349

    申请日：2003-01-15

    申请人： Takayuki Watanabe ,  Yoshihiko Shibata ,  Tsuyoshi Ujihara ,  Takashi Yoshida ,  Akihiko Oyama

    发明人： Takayuki Watanabe ,  Yoshihiko Shibata ,  Tsuyoshi Ujihara ,  Takashi Yoshida ,  Akihiko Oyama

    IPC分类号： H01L43/00 ,  H01L3/0328

    CPC分类号： H01L29/201 ,  G01R33/07 ,  H01L29/205 ,  H01L43/065 ,  H01L43/14

    摘要： Hall device is provided by enabling stable provision of a quantum well compound semiconductor stacked structure. It has first and second compound semiconductor layers composed of Sb and at least two of five elements of Al, Ga, In, As and P, and an active layer composed of InxGa1-xAsySb1-y (0.8≦x≦1.0, 0.8≦y≦1.0), which are stacked. Compared with the active layer, the first and second compound semiconductor layers each have a wider band gap, and a resistance value five times or more greater. The lattice constant differences between the active layer and the first and second compound semiconductor layers are each designed in a range of 0.0-1.2%, and the thickness of the active layer is designed in a range of 30-100 nm.

    摘要翻译： 通过实现稳定提供量子阱化合物半导体堆叠结构来提供霍尔器件。 它具有由Sb和Al，Ga，In，As和P的五种元素中的至少两种构成的第一和第二化合物半导体层，以及由In x Ga 1 Al， （0.8≤x≤1.0,0.8≤y≤1.0），这些层叠在一起。 与有源层相比，第一和第二化合物半导体层各自具有较宽的带隙，电阻值为五倍以上。 有源层与第一和第二化合物半导体层之间的晶格常数差分别设计在0.0-1.2％的范围内，有源层的厚度设计在30-100nm的范围内。