发明申请
- 专利标题： Semiconductor integrated circuit device and process for manufacturing the same
- 专利标题（中）： 半导体集成电路器件及其制造方法
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申请号： US10950595申请日： 2004-09-28
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公开(公告)号： US20050042822A1公开(公告)日： 2005-02-24
- 发明人: Makoto Yoshida , Takahiro Kumauchi , Yoshitaka Tadaki , Kazuhiko Kajigaya , Hideo Aoki , Isamu Asano
- 申请人： Makoto Yoshida , Takahiro Kumauchi , Yoshitaka Tadaki , Kazuhiko Kajigaya , Hideo Aoki , Isamu Asano
- 优先权： JP8-137957 19960531
- 主分类号： H01L21/265
- IPC分类号： H01L21/265 ; H01L21/3205 ; H01L21/324 ; H01L21/336 ; H01L21/60 ; H01L21/768 ; H01L21/8238 ; H01L21/8239 ; H01L21/8242 ; H01L27/108 ; H01L21/8249 ; H01L21/8234
摘要：
In a process for manufacturing a semiconductor integrated circuit device having a MISFET, in order that a shallow junction between the source/drain of the MISFET and a semiconductor substrate may be realized by reducing the number of heat treatment steps, all conductive films to be deposited on the semiconductor substrate are deposited at a temperature of 500° C. or lower at a step after the MISFET has been formed. Moreover, all insulating films to be deposited over the semiconductor substrate are deposited at a temperature of 500° C. or lower at a step after the MISFET has been formed.
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