发明申请
- 专利标题: Active area bonding compatible high current structures
- 专利标题(中): 有源区粘合兼容高电流结构
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申请号: US10698184申请日: 2003-10-31
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公开(公告)号: US20050042853A1公开(公告)日: 2005-02-24
- 发明人: John Gasner , Michael Church , Sameer Parab , Paul Bakeman , David Decrosta , Robert Lomenick , Chris McCarty
- 申请人: John Gasner , Michael Church , Sameer Parab , Paul Bakeman , David Decrosta , Robert Lomenick , Chris McCarty
- 专利权人: INTERSIL AMERICAS INC.
- 当前专利权人: INTERSIL AMERICAS INC.
- 主分类号: H01L23/485
- IPC分类号: H01L23/485 ; H01L21/44
摘要:
An integrated circuit with circuits under a bond pad. In one embodiment, the integrated circuit comprises a substrate, a top conductive layer, one or more intermediate conductive layers, layers of insulating material and devices. The top conductive layer has a at least one bonding pad and a sub-layer of relatively stiff material. The one or more intermediate conductive layers are formed between the top conductive layer and the substrate. The layers of insulating material separate the conductive layers. Moreover, one layer of the layers of insulating material is relatively hard and is located between the top conductive layer and an intermediate conductive layer closest to the top conductive layer. The devices are formed in the integrated circuit. In addition, at least the intermediate conductive layer closest to the top conductive layer is adapted for functional interconnections of select devices under the bond pad.
公开/授权文献
- US07005369B2 Active area bonding compatible high current structures 公开/授权日:2006-02-28
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