公开(公告)号：US20070187837A1

公开(公告)日：2007-08-16

申请号：US11737395

申请日：2007-04-19

申请人： John Gasner ,  Michael Church ,  Sameer Parab ,  Paul Bakeman ,  David Decrosta ,  Robert Lomenick ,  Chris McCarty

发明人： John Gasner ,  Michael Church ,  Sameer Parab ,  Paul Bakeman ,  David Decrosta ,  Robert Lomenick ,  Chris McCarty

IPC分类号： H01L23/48 ,  H01L23/52

CPC分类号： H01L24/05 ,  H01L23/528 ,  H01L23/53295 ,  H01L24/03 ,  H01L24/48 ,  H01L2224/02166 ,  H01L2224/04042 ,  H01L2224/05001 ,  H01L2224/05082 ,  H01L2224/05166 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/48463 ,  H01L2224/85399 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/04941 ,  H01L2924/05042 ,  H01L2924/14 ,  H01L2924/01007 ,  H01L2224/45099

摘要： A semiconductor structure is provided. In one embodiment, the structure comprises at least one active device located in a substrate and directly under a bond pad. A conductor is located between the bond pad and the substrate. The conductor has a plurality of gaps filled with insulating material. The insulating material is harder than the conductor.

摘要翻译： 提供半导体结构。 在一个实施例中，该结构包括至少一个位于衬底中并且直接在接合焊盘下的有源器件。 导体位于接合焊盘和基板之间。 导体具有填充有绝缘材料的多个间隙。 绝缘材料比导体硬。

公开(公告)号：US20070184645A1

公开(公告)日：2007-08-09

申请号：US11737392

申请日：2007-04-19

申请人： John Gasner ,  Michael Church ,  Sameer Parab ,  Paul Bakeman Jr. ,  David Decrosta ,  Robert Lomenick ,  Chris McCarty

发明人： John Gasner ,  Michael Church ,  Sameer Parab ,  Paul Bakeman Jr. ,  David Decrosta ,  Robert Lomenick ,  Chris McCarty

IPC分类号： H01L21/44 ,  H01L21/4763

CPC分类号： H01L24/05 ,  H01L23/528 ,  H01L23/53295 ,  H01L24/03 ,  H01L24/48 ,  H01L2224/02166 ,  H01L2224/04042 ,  H01L2224/05001 ,  H01L2224/05082 ,  H01L2224/05166 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/48463 ,  H01L2224/85399 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/04941 ,  H01L2924/05042 ,  H01L2924/14 ,  H01L2924/01007 ,  H01L2224/45099

摘要： A method of forming a semiconductor structure is provided. One method comprises forming a device region between a substrate and a bond pad. Patterning a conductor between the bond pad and the device region with gaps. Filling the gaps with insulation material that is harder than the conductor to form pillars of relatively hard material that extend through the conductor and forming an insulation layer of the insulation material between the conductor and the bond pad.

摘要翻译： 提供一种形成半导体结构的方法。 一种方法包括在衬底和接合衬垫之间形成器件区域。 在接合焊盘和具有间隙的器件区域之间形成导体。 使用比导体硬的绝缘材料填充间隙，以形成延伸穿过导体的相对硬的材料的支柱，并在导体和接合垫之间形成绝缘材料的绝缘层。

公开(公告)号：US20070072400A1

公开(公告)日：2007-03-29

申请号：US11236270

申请日：2005-09-26

申请人： Paul Bakeman

发明人： Paul Bakeman

IPC分类号： H01L21/20

CPC分类号： H01L21/02667 ,  H01L21/02532 ,  H01L21/2026 ,  H01L21/268 ,  H01L21/324 ,  H01L21/67115

摘要： Apparatus for and methods of thermally processing undoped or lightly doped semiconductor wafers (30) that typically are not very absorptive of an annealing radiation beam (14) are disclosed. The apparatus (10) uses a relatively low power activating radiation beam (240) with a photon energy greater than the bandgap energy of the semiconductor substrate in order to generate free carriers (315) at and near the substrate surface (32). The free carriers so generated enhance the absorption by the substrate surface of the longer wavelength annealing radiation beam. The annealing radiation beam is thus able to rapidly heat the substrate surface and permit subsequent rapid cooling to obtain, for example, a high level of electrical activity (activation) of dopants (310) formed therein. The invention obviates the need to pre-heat the substrate in order to increase absorption of the annealing radiation beam when performing thermal processing.

摘要翻译： 公开了用于热处理未掺杂或轻掺杂的半导体晶片（30）的装置和方法，其通常不会非常吸收退火的辐射束（14）。 装置（10）使用具有大于半导体衬底的带隙能量的光子能量的相对低功率的激活辐射束（240），以便在衬底表面（32）处和附近产生自由载流子（315）。 如此产生的自由载体增强了较长波长退火辐射束的衬底表面的吸收。 因此，退火辐射束能够快速加热衬底表面并允许随后的快速冷却以获得例如在其中形成的掺杂剂（310）的高水平的电活动（激活）。 本发明消除了在进行热处理时预热衬底以增加退火辐射束的吸收的需要。

公开(公告)号：US20060099823A1

公开(公告)日：2006-05-11

申请号：US11305987

申请日：2005-12-19

申请人： John Gasner ,  Michael Church ,  Sameer Parab ,  Paul Bakeman ,  David Decrosta ,  Robert Lomenick ,  Chris McCarty

发明人： John Gasner ,  Michael Church ,  Sameer Parab ,  Paul Bakeman ,  David Decrosta ,  Robert Lomenick ,  Chris McCarty

IPC分类号： H01L21/31

CPC分类号： H01L24/05 ,  H01L23/528 ,  H01L23/53295 ,  H01L24/03 ,  H01L24/48 ,  H01L2224/02166 ,  H01L2224/04042 ,  H01L2224/05001 ,  H01L2224/05082 ,  H01L2224/05166 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/48463 ,  H01L2224/85399 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/04941 ,  H01L2924/05042 ,  H01L2924/14 ,  H01L2924/01007 ,  H01L2224/45099

摘要： An integrated circuit with circuits under a bond pad. In one embodiment, the integrated circuit comprises a substrate, a top conductive layer, one or more intermediate conductive layers, layers of insulating material and devices. The top conductive layer has a at least one bonding pad and a sub-layer of relatively stiff material. The one or more intermediate conductive layers are formed between the top conductive layer and the substrate. The layers of insulating material separate the conductive layers. Moreover, one layer of the layers of insulating material is relatively hard and is located between the top conductive layer and an intermediate conductive layer closest to the top conductive layer. The devices are formed in the integrated circuit. In addition, at least the intermediate conductive layer closest to the top conductive layer is adapted for functional interconnections of select devices under the bond pad.

公开(公告)号：US20050042853A1

公开(公告)日：2005-02-24

申请号：US10698184

申请日：2003-10-31

申请人： John Gasner ,  Michael Church ,  Sameer Parab ,  Paul Bakeman ,  David Decrosta ,  Robert Lomenick ,  Chris McCarty

发明人： John Gasner ,  Michael Church ,  Sameer Parab ,  Paul Bakeman ,  David Decrosta ,  Robert Lomenick ,  Chris McCarty

IPC分类号： H01L23/485 ,  H01L21/44

CPC分类号： H01L24/05 ,  H01L23/528 ,  H01L23/53295 ,  H01L24/03 ,  H01L24/48 ,  H01L2224/02166 ,  H01L2224/04042 ,  H01L2224/05001 ,  H01L2224/05082 ,  H01L2224/05166 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/48463 ,  H01L2224/85399 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/04941 ,  H01L2924/05042 ,  H01L2924/14 ,  H01L2924/01007 ,  H01L2224/45099

摘要： An integrated circuit with circuits under a bond pad. In one embodiment, the integrated circuit comprises a substrate, a top conductive layer, one or more intermediate conductive layers, layers of insulating material and devices. The top conductive layer has a at least one bonding pad and a sub-layer of relatively stiff material. The one or more intermediate conductive layers are formed between the top conductive layer and the substrate. The layers of insulating material separate the conductive layers. Moreover, one layer of the layers of insulating material is relatively hard and is located between the top conductive layer and an intermediate conductive layer closest to the top conductive layer. The devices are formed in the integrated circuit. In addition, at least the intermediate conductive layer closest to the top conductive layer is adapted for functional interconnections of select devices under the bond pad.

摘要翻译： 一个集成电路，具有一个接合焊盘下的电路。 在一个实施例中，集成电路包括衬底，顶部导电层，一个或多个中间导电层，绝缘材料和器件层。 顶部导电层具有至少一个焊盘和相对刚性材料的子层。 一个或多个中间导电层形成在顶部导电层和衬底之间。 绝缘材料层分离导电层。 此外，绝缘材料层的一层相对较硬，并且位于顶部导电层和最靠近顶部导电层的中间导电层之间。 器件形成在集成电路中。 此外，至少最靠近顶部导电层的中间导电层适用于接合焊盘下的选择器件的功能互连。