发明申请
- 专利标题： SPUTTERING APPARATUS AND MANUFACTURING METHOD OF METAL LAYER/METAL COMPOUND LAYER BY USING THEREOF
- 专利标题（中）： 金属层/金属化合物层的溅射装置及其制造方法
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申请号： US10711446申请日： 2004-09-20
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公开(公告)号： US20050042863A1公开(公告)日： 2005-02-24
- 发明人: Yu-Cheng Liu
- 申请人： Yu-Cheng Liu
- 主分类号： C23C14/35
- IPC分类号： C23C14/35 ; C23C14/56 ; C23C16/44 ; H01J37/32 ; H01L21/44 ; H01L21/4763
摘要：
A sputtering apparatus is provided. The sputtering apparatus comprises cooling water system having a temperature-controlling device for controlling the temperature of the sidewalls of the reaction chamber. During the deposition process of titanium/titanium nitride, the sidewall temperature of the chamber is controlled at about 50° C.˜70° C. for reducing the difference of temperature distribution in the chamber so that the reaction temperature within the reaction chamber can be rendered substantially uniform.
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