Invention Application
- Patent Title: Silicide/semiconductor structure and method of fabrication
- Patent Title (中): 硅化物/半导体结构及其制造方法
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Application No.: US10880992Application Date: 2004-06-30
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Publication No.: US20050045969A1Publication Date: 2005-03-03
- Inventor: Wen-Chin Lee , Chung-Hu Ge , Chenming Hu
- Applicant: Wen-Chin Lee , Chung-Hu Ge , Chenming Hu
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L23/31 ; H01L23/485 ; H01L23/62 ; H01L27/088 ; H01L27/105 ; H01L29/161 ; H01L29/165 ; H01L29/47 ; H01L29/78
Abstract:
A preferred embodiment of the present invention comprises a dielectric/metal/2nd energy bandgap (Eg) semiconductor/1st Eg substrate structure. In order to reduce the contact resistance, a semiconductor with a lower energy bandgap (2nd Eg) is put in contact with metal. The energy bandgap of the 2nd Eg semiconductor is lower than the energy bandgap of the 1st Eg semiconductor and preferably lower than 1.1 eV. In addition, a layer of dielectric may be deposited on the metal. The dielectric layer has built-in stress to compensate for the stress in the metal, 2nd Eg semiconductor and 1st Eg substrate. A process of making the structure is also disclosed.
Public/Granted literature
- US07453133B2 Silicide/semiconductor structure and method of fabrication Public/Granted day:2008-11-18
Information query
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