Invention Application
US20050048375A1 Method of making an attenuated phase-shifting mask from a mask blank
审中-公开
从掩模板制造衰减的相移掩模的方法
- Patent Title: Method of making an attenuated phase-shifting mask from a mask blank
- Patent Title (中): 从掩模板制造衰减的相移掩模的方法
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Application No.: US10649310Application Date: 2003-08-27
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Publication No.: US20050048375A1Publication Date: 2005-03-03
- Inventor: Cheng-Ming Lin
- Applicant: Cheng-Ming Lin
- Main IPC: G03C5/00
- IPC: G03C5/00 ; G03F1/00 ; G03F9/00

Abstract:
A method of patterning an attenuated phase-shifting mask from a mask blank, is provided. The mask blank has an attenuating and phase-shifting layer formed over a transparent layer. The phase-shifting layer has an initial thickness. The initial thickness of the phase-shifting layer is adapted to provide a first predetermined phase shift for a first wavelength of light passing therethrough. The initial thickness of the phase shifting layer is reduced to a first thickness. Portions of the phase-shifting layer are removed to form a pattern of clear areas. The first thickness of the phase-shifting layer at dark areas is adapted to provide a second predetermined phase shift for a second wavelength of light passing therethrough relative to the same light of the second wavelength passing through the clear areas. The first wavelength differs from the second wavelength.
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