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公开(公告)号：US20080169058A1
公开(公告)日：2008-07-17
申请号：US11733366
申请日：2007-04-10
Applicant: Chung-Chih Feng , Pai-Hsiang Wu , Yuan-Fang Tsai , Jung-Hsien Cheng , Cheng-Ming Lin , Chien-Chia Huang
Inventor： Chung-Chih Feng , Pai-Hsiang Wu , Yuan-Fang Tsai , Jung-Hsien Cheng , Cheng-Ming Lin , Chien-Chia Huang
CPC classification number: B32B27/12 , D06N3/0063 , D06N3/0097 , D06N3/145 , Y10T428/24438 , Y10T428/31504 , Y10T442/3854 , Y10T442/674
Abstract: A method is provided for making artificial leather upside down. In the method, an upper color layer is provided on releasing paper and the upper color layer is dried. A lower color layer is provided on the upper color layer and the lower color layer is dried. A paste layer is provided on the lower color layer and the pate layer is preliminarily dried. A substrate is attached to the paste layer. The paste layer is dried. The releasing paper is removed.
Abstract translation: 提供了将人造革倒立制造的方法。 在该方法中，在剥离纸上设置上色层，并且上色层被干燥。 在上色层上设置较低色层，下层彩色层被干燥。 在下色层上设置糊状层，预先干燥头层。 衬底附着到膏层上。 将糊层干燥。 取出纸张。
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2.发明授权Application of high transmittance attenuating phase shifting mask with dark tone for sub-0.1 micrometer logic device contact hole pattern in 193 NM lithography 有权在193 NM光刻中应用具有暗色调的高透光率衰减相移掩模，用于亚-0.1微米逻辑器件接触孔图案公开(公告)号：US07008730B2
公开(公告)日：2006-03-07
申请号：US10338118
申请日：2003-01-07
Applicant: Cheng-Ming Lin
Inventor： Cheng-Ming Lin
Abstract: An attenuating phase shifting mask for forming contact holes in a layer of negative resist, a method of forming the mask, and a method of forming the contact holes are described. The mask is formed from a mask blank having a layer of attenuating phase shifting material formed on a transparent mask blank. The attenuating phase shifting material has a transmittance of greater than 20% and between about 20% and 50% for light having a wavelength of 193 nanometers. The mask is a dark tone mask having mask elements formed of the attenuating phase shifting material at the locations of the mask corresponding to the locations of the contact holes. The mask is used to expose a layer of negative resist which is then developed to form the contact holes.
Abstract translation: 描述了用于在负抗蚀剂层中形成接触孔的衰减相移掩模，形成掩模的方法以及形成接触孔的方法。 掩模由具有形成在透明掩模板上的衰减相移材料层的掩模坯料形成。 衰减相移材料对于波长为193纳米的光具有大于20％的透射率和约20％至50％的透射率。 掩模是在掩模对应于接触孔的位置的位置处由衰减相移材料形成的掩模元件的暗色调掩模。 该掩模用于暴露一层负性抗蚀剂，然后将其显影以形成接触孔。
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公开(公告)号：US06905802B2
公开(公告)日：2005-06-14
申请号：US10637862
申请日：2003-08-09
Applicant: Cheng-Ming Lin
Inventor： Cheng-Ming Lin
CPC classification number: G03F1/32 , G03F7/70283 , G03F7/7045 , G03F7/70466 , Y10S430/143 , Y10S430/146
Abstract: A method for exposing a blanket photoresist layer employs: (1) a first direct write exposure of the blanket photoresist layer to form therein an exposed peripheral sub-region of a desired exposed pattern; and (2) a second masked photoexposure of the blanket photoresist layer to form therein a masked photoexposed bulk sub-region of the desired exposed pattern which overlaps but does not extend beyond the exposed peripheral sub-region. The once masked photoexposed once direct write exposed blanket photoresist layer may be developed to form a patterned photoresist layer employed for forming a patterned opaque layer border within an opaque bordered attenuated phase shift mask.
Abstract translation: 用于曝光橡皮布光致抗蚀剂层的方法采用：（1）毯式光致抗蚀剂层的第一直接写入曝光，以在其中形成所需曝光图案的暴露外围子区域; 和（2）所述覆盖光致抗蚀剂层的第二掩蔽曝光，以在其中形成与所暴露的外围子区域重叠但不延伸超过所述暴露的外围子区域的所需曝光图案的被掩蔽的光曝光的体区子区域。 可以显影一次被曝光的一次直接写曝光的覆盖光致抗蚀剂层，以形成用于在不透明的边界衰减相移掩模内形成图案化不透明层边界的图案化光致抗蚀剂层。
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公开(公告)号：US20050048375A1
公开(公告)日：2005-03-03
申请号：US10649310
申请日：2003-08-27
Applicant: Cheng-Ming Lin
Inventor： Cheng-Ming Lin
CPC classification number: G03F1/32
Abstract: A method of patterning an attenuated phase-shifting mask from a mask blank, is provided. The mask blank has an attenuating and phase-shifting layer formed over a transparent layer. The phase-shifting layer has an initial thickness. The initial thickness of the phase-shifting layer is adapted to provide a first predetermined phase shift for a first wavelength of light passing therethrough. The initial thickness of the phase shifting layer is reduced to a first thickness. Portions of the phase-shifting layer are removed to form a pattern of clear areas. The first thickness of the phase-shifting layer at dark areas is adapted to provide a second predetermined phase shift for a second wavelength of light passing therethrough relative to the same light of the second wavelength passing through the clear areas. The first wavelength differs from the second wavelength.
Abstract translation: 提供了从掩模坯料图案化衰减的相移掩模的方法。 掩模空白具有形成在透明层上的衰减和相移层。 相移层具有初始厚度。 相移层的初始厚度适于为通过其中的第一波长的光提供第一预定相移。 相移层的初始厚度减小到第一厚度。 去除相移层的部分以形成清晰区域的图案。 相对于通过透明区域的第二波长的相同的光，适于在暗区域的相移层的第一厚度适于为通过其中的第二波长的光提供第二预定相移。 第一波长与第二波长不同。
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5.发明授权Fitting methodology of etching times determination for a mask to provide critical dimension and phase control 有权用于掩模的蚀刻时间确定的拟合方法以提供关键尺寸和相位控制公开(公告)号：US08158015B2
公开(公告)日：2012-04-17
申请号：US11686773
申请日：2007-03-15
Applicant: Cheng-Ming Lin , Joy Huang
Inventor： Cheng-Ming Lin , Joy Huang
IPC: G01L21/30
Abstract: The present disclosure provides a mask and a method of determining etching times for etching the mask. In one embodiment, values for a main etching time and an over-etching time are determined simultaneously based on a desired critical dimension (CD) parameter and a desired phase parameter for the mask.
Abstract translation: 本公开提供了一种掩模和确定用于蚀刻掩模的蚀刻时间的方法。 在一个实施例中，基于期望的临界尺寸（CD）参数和掩模的期望的相位参数同时确定主蚀刻时间和过蚀刻时间的值。
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Patent Agency Ranking
公开(公告)号：US20090025810A1
公开(公告)日：2009-01-29
申请号：US11867163
申请日：2007-10-04
Applicant: Andrew M. Wo , Cheng-Ming Lin , Yu-Shiang Lai
Inventor： Andrew M. Wo , Cheng-Ming Lin , Yu-Shiang Lai
IPC: F15C3/00
CPC classification number: B01F11/0258 , B01F13/0059 , B01L3/5027 , H02K33/18 , Y10T137/2087
Abstract: The present invention relates to a MEMS-based micro-oscillator which can generate specific vortical pattern in a micro-channel. The micro-vortex generator is composed of a suspended bridge with a gold-plated, rectangular flat-plate as the primary structure. When an AC current passed through the gold leads under an external magnetic field, the plate will oscillate due to Lorenz force, thereby generating micro-vortices.
Abstract translation: 本发明涉及一种可在微通道中产生特定涡旋图案的基于MEMS的微振荡器。 微涡流发生器由具有镀金，矩形平板作为主要结构的悬挂桥组成。 当交流电流在外部磁场下通过金引线时，板将由于洛伦兹力而振荡，从而产生微旋涡。
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7.发明申请Fitting Methodology of Etching Times Determination for a Mask to Provide Critical Dimension and Phase Control 有权蚀刻时间的拟合方法确定掩模以提供关键尺寸和相位控制公开(公告)号：US20080226991A1
公开(公告)日：2008-09-18
申请号：US11686773
申请日：2007-03-15
Applicant: Cheng-Ming Lin , Joy Huang
Inventor： Cheng-Ming Lin , Joy Huang
IPC: G03F1/00
Abstract: The present disclosure provides a mask and a method of determining etching times for etching the mask. In one embodiment, values for a main etching time and an over-etching time are determined simultaneously based on a desired critical dimension (CD) parameter and a desired phase parameter for the mask.
Abstract translation: 本公开提供了一种掩模和确定用于蚀刻掩模的蚀刻时间的方法。 在一个实施例中，基于期望的临界尺寸（CD）参数和掩模的期望的相位参数同时确定主蚀刻时间和过蚀刻时间的值。
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8.发明申请SINGLE TRENCH REPAIR METHOD WITH ETCHED QUARTZ FOR ATTENUATED PHASE SHIFTING MASK 有权具有蚀刻石墨的单层激光修复方法，用于衰减相位移位掩模公开(公告)号：US20060234141A1
公开(公告)日：2006-10-19
申请号：US11425423
申请日：2006-06-21
Applicant: Cheng-Ming Lin
Inventor： Cheng-Ming Lin
Abstract: In accordance with the objectives of the invention a new method is provided for the repair of an attenuated phase shifting mask having a contact pattern. The invention etches a single trench in the quartz substrate of the phase shifter mask and removes the impact of a void in the phase shifter material. Alternatively, the invention provides for first conventionally restoring the original dimensions of a contact hole in which a pinhole is present and then etching a single or a double trench in the exposed substrate of the restored contact opening.
Abstract translation: 根据本发明的目的，提供了一种用于修复具有接触图案的衰减相移掩模的新方法。 本发明蚀刻移相器掩模的石英衬底中的单个沟槽并去除移相器材料中空隙的冲击。 或者，本发明提供了首先常规地恢复其中存在针孔的接触孔的原始尺寸，然后在恢复的接触开口的暴露的基底中蚀刻单个或双沟槽。
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公开(公告)号：US08268541B2
公开(公告)日：2012-09-18
申请号：US11733471
申请日：2007-04-10
Applicant: Cheng-Ming Lin , Chue San Yoo
Inventor： Cheng-Ming Lin , Chue San Yoo
IPC: G03F7/20
CPC classification number: G03F7/70916 , G03F7/70866
Abstract: The present disclosure provides a lithography apparatus. The lithography apparatus includes a radiation source providing a radiation energy with a wavelength selected from the group consisting of 193 nm, 248 nm, and 365 nm; a lens system configured approximate to the radiation source; a mask chamber proximate to the lens system, configured to hold a mask and operable to provide a single atom gas to the mask chamber; and a substrate stage configured to hold a substrate and receive the radiation energy through the lens system and the mask during an exposing process.
Abstract translation: 本公开提供一种光刻设备。 光刻设备包括：辐射源，其提供波长选自193nm，248nm和365nm的波长的辐射能; 配置为近似于辐射源的透镜系统; 靠近透镜系统的掩模室，被配置为保持掩模并可操作以向掩模室提供单个原子气体; 以及衬底台，被配置为在曝光过程期间保持衬底并且通过透镜系统和掩模接收辐射能量。
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10.发明授权公开(公告)号：US07917244B2
公开(公告)日：2011-03-29
申请号：US11686238
申请日：2007-03-14
Applicant: Cheng-Ming Lin , Chai-Wei Chang
Inventor： Cheng-Ming Lin , Chai-Wei Chang
CPC classification number: G03F7/70625 , G03F7/705 , G03F7/70533
Abstract: A method for reducing a critical dimension error of a substrate is provided. A first function is identified for correlating a critical dimension error with a first effect. A second function is identified for correlating a critical dimension error with a scan speed. An optimal scan speed for minimizing the critical dimension error is identified by substantially equating the first function and the second function. The substrate may be a mask or a wafer.
Abstract translation: 提供了一种降低衬底临界尺寸误差的方法。 识别出关键维度误差与第一效应相关联的第一功能。 识别出关键尺寸误差与扫描速度相关的第二个功能。 用于最小化临界尺寸误差的最佳扫描速度通过基本上等同于第一功能和第二功能来识别。 衬底可以是掩模或晶片。
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