发明申请
- 专利标题： Semiconductor memory and method of producing the same
- 专利标题（中）： 半导体存储器及其制造方法
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申请号： US10959661申请日： 2004-10-07
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公开(公告)号： US20050048717A1公开(公告)日： 2005-03-03
- 发明人: Eiji Ito , Hitoshi Ito
- 申请人： Eiji Ito , Hitoshi Ito
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 优先权： JP2001-340198 20011106
- 主分类号： H01L21/02
- IPC分类号： H01L21/02 ; H01L21/8242 ; H01L27/02 ; H01L27/108
摘要：
A semiconductor memory incorporates cylinder-type stacked capacitors. Each capacitor has a lower electrode and an upper electrode facing each other via a dielectric film. The lower electrode of each capacitor is supported by a beam-like insulator at a side portion of the electrode, the side portion being apart from a lower edge of the lower electrode.
公开/授权文献
- US07064028B2 Semiconductor memory and method of producing the same 公开/授权日：2006-06-20
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