发明申请
- 专利标题： Semiconductor device and manufacturing method therefor
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US10910576申请日： 2004-08-04
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公开(公告)号： US20050051845A1公开(公告)日： 2005-03-10
- 发明人: Yoshikazu Nakagawa , Naoki Izumi
- 申请人： Yoshikazu Nakagawa , Naoki Izumi
- 申请人地址： JP Tsukuba-shi
- 专利权人： Semiconductor Leading Edge Technologies, Inc.
- 当前专利权人： Semiconductor Leading Edge Technologies, Inc.
- 当前专利权人地址： JP Tsukuba-shi
- 优先权： JP2003-315743 20030908
- 主分类号： H01L21/28
- IPC分类号： H01L21/28 ; H01L21/00 ; H01L21/8238 ; H01L27/092 ; H01L29/417 ; H01L29/423 ; H01L29/49 ; H01L29/78
摘要：
A gate electrode in an NMOS region is one of intrinsic silicon and a material having a work function equivalent to that of intrinsic silicon, and a material having a work function smaller than that of intrinsic silicon. A gate electrode in a PMOS region is one of intrinsic silicon and a material having a work function equivalent to that of intrinsic silicon, and a material having a work function larger than that of intrinsic silicon. Further, a source/drain region in the NMOS region includes a silicide layer of a material having a work function smaller than that of intrinsic silicon, and a source/drain region in the PMOS region includes a silicide layer of a material having a work function larger than that of intrinsic silicon.
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