Invention Application
US20050055121A1 System and methed for effective field loss analysis for semiconductor wafers 失效
对半导体晶圆进行有效的场损分析系统和测量

  • Patent Title: System and methed for effective field loss analysis for semiconductor wafers
  • Patent Title (中): 对半导体晶圆进行有效的场损分析系统和测量
  • Application No.: US10655850
    Application Date: 2003-09-04
  • Publication No.: US20050055121A1
    Publication Date: 2005-03-10
  • Inventor: Wun Wang
  • Applicant: Wun Wang
  • Main IPC: G05B23/02
  • IPC: G05B23/02 G06F19/00
System and methed for effective field loss analysis for semiconductor wafers
Abstract:
This invention relates to a method for yield loss analysis of process steps of semiconductor wafers having a plurality of dies, and more particularly relates to a defect inspection technique to determine a hit ratio, computation of yield impact contributions for the defects, and determination of a kill ratio for a specific type of defect. Yield loss is estimated ultimately upon a choice of a defect density distribution function. A defect calibrated factor and a yield impact calibrated factor are introduced herein.
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