发明申请
- 专利标题： Transparent amorphous carbon structure in semiconductor devices
- 专利标题（中）： 半导体器件中透明无定形碳结构
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申请号： US10789736申请日： 2004-02-27
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公开(公告)号： US20050056835A1公开(公告)日： 2005-03-17
- 发明人: Zhiping Yin , David Williams , Weimin Li
- 申请人： Zhiping Yin , David Williams , Weimin Li
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 主分类号： H01L21/314
- IPC分类号： H01L21/314 ; H01L29/04
摘要：
A transparent amorphous carbon layer is formed. The transparent amorphous carbon layer has a low absorption coefficient such that the amorphous carbon is transparent in visible light. The transparent amorphous carbon layer may be used in semiconductor devices for different purposes. The transparent amorphous carbon layer may be included in a final structure in semiconductor devices. The transparent amorphous carbon layer may also be used as a mask in an etching process during fabrication of semiconductor devices.
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