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    Beverage Container with Illuminable Arrangement
    1.
    发明公开
    Beverage Container with Illuminable Arrangement 审中-公开

    公开(公告)号：US20240225325A9

    公开(公告)日：2024-07-11

    申请号：US18210163

    申请日：2023-06-15

    Applicant: Diana JOE ,  Ruby J. ESPINOZA ,  Weimin LI

    Inventor： Diana JOE ,  Ruby J. ESPINOZA ,  Weimin LI

    IPC: A47G19/22 ,  A45F5/00 ,  F21V23/04

    CPC classification number: A47G19/2227 ,  A45F5/00 ,  A47G19/2222 ,  A47G19/2266 ,  A47G19/2272 ,  F21V23/04 ,  F21Y2115/10

    Abstract: A beverage container includes a container bottle and an elevated container lid. The elevated container lid includes a lid member detachably and coaxially connected to a top end of the container bottle to cover a top opening of the container bottle, and a hollow elevated drinking spout member having a base portion coaxially mounted on the lid member, a mouthpiece portion integrally and coaxially extended from the base portion, and a drinking opening coaxially formed at a top end of the mouthpiece portion, wherein the mouthpiece portion of the elevated drinking spout member has a nipple shape and the drinking opening has a size equal to or slightly larger than a diameter of a straw to be inserted therethrough into the interior cavity until reaching the bottom wall of the container bottle.

    High concentration nitrogen-containing germanium telluride based memory devices and processes of making
    4.
    发明授权
    High concentration nitrogen-containing germanium telluride based memory devices and processes of making 有权
    高浓度含氮锗碲基记忆体及其制备方法

    公开(公告)号：US08330136B2

    公开(公告)日：2012-12-11

    申请号：US13132369

    申请日：2009-12-04

    Applicant: Jun-Fei Zheng ,  Jeffrey F. Roeder ,  Weimin Li ,  Philip S. H. Chen

    Inventor： Jun-Fei Zheng ,  Jeffrey F. Roeder ,  Weimin Li ,  Philip S. H. Chen

    IPC: H01L29/02 ,  H01L47/00 ,  H01L21/00

    CPC classification number: H01L45/1683 ,  C23C16/305 ,  C23C16/34 ,  H01L45/06 ,  H01L45/144 ,  H01L45/1616

    Abstract: A PCM device has the composition GexTeyNzAm deposited onto a substrate, where x is about 40% to about 60%, y is about 30% to about 49%, and z is about 5% to about 20% and more preferably about 5% to about 40%. The component represented as A is optional and representative of an element of Sb, Sn, In, Ga, or Zn, and m is up to about 15%. The composition is in the form of a film, and the nitrogen allows for the substantially conformal deposition of the film onto the substrate. A CVD process for depositing the PCM comprises delivering a Ge-based precursor and a Te-based precursor in vapor form to a CVD chamber, heating and pressurizing the chamber, and depositing the film onto a substrate. In making a phase change device using this process, the film is annealed and polished.

    Abstract translation: PCM装置具有沉积在基底上的组成GexTeyNzAm，其中x为约40％至约60％，y为约30％至约49％，z为约5％至约20％，更优选约5％至 约40％。 表示为A的组分是任选的，并且代表Sb，Sn，In，Ga或Zn的元素，并且m高达约15％。 组合物是膜的形式，并且氮允许膜基本上保形沉积到基底上。 用于沉积PCM的CVD方法包括将蒸气形式的基于Ge的前体和Te基前体输送到CVD室，对该室进行加热和加压，以及将该膜沉积在基底上。 在制造使用该工艺的相变装置时，将膜进行退火和抛光。

    METHOD AND COMPOSITION FOR DEPOSITING RUTHENIUM WITH ASSISTIVE METAL SPECIES
    5.
    发明申请
    METHOD AND COMPOSITION FOR DEPOSITING RUTHENIUM WITH ASSISTIVE METAL SPECIES 有权
    用辅助金属物种沉积金属的方法和组合物

    公开(公告)号：US20120064719A1

    公开(公告)日：2012-03-15

    申请号：US13256832

    申请日：2010-03-17

    Applicant: Jorge A. Lubguban, JR. ,  Thomas M. Cameron ,  Chongying Xu ,  Weimin Li

    Inventor： Jorge A. Lubguban, JR. ,  Thomas M. Cameron ,  Chongying Xu ,  Weimin Li

    IPC: H01L21/28 ,  B05D5/12 ,  H01B1/00

    CPC classification number: C23C16/0272 ,  C23C16/18 ,  C23C16/45534 ,  H01L28/65

    Abstract: A method of forming a ruthenium-containing film in a vapor deposition process, including depositing ruthenium with an assistive metal species that increases the rate and extent of ruthenium deposition in relation to deposition of ruthenium in the absence of such assistive metal species. An illustrative precursor composition useful for carrying out such method includes a ruthenium precursor and a strontium precursor in a solvent medium, wherein one of the ruthenium and strontium precursors includes a pendant functionality that coordinates with the central metal atom of the other precursor, so that ruthenium and strontium co-deposit with one another. The method permits incubation time for ruthenium deposition on non- metallic substrates to be very short, thereby accommodating very rapid film formation in processes such as atomic layer deposition.

    Abstract translation: 一种在气相沉积工艺中形成含钌膜的方法，包括用辅助金属物质沉积钌，其在不存在这种辅助金属物质的情况下相对于沉积钌而增加钌沉积的速率和程度。 用于实施这种方法的说明性前体组合物包括在溶剂介质中的钌前体和锶前体，其中钌和锶前体之一包括与另一前体的中心金属原子配位的侧链官能团，使得钌 和锶共沉积。 该方法允许在非金属基底上钌沉积的孵育时间非常短，从而在诸如原子层沉积的过程中容纳非常快速的成膜。

    HIGH CONCENTRATION NITROGEN-CONTAINING GERMANIUM TELLURIDE BASED MEMORY DEVICES AND PROCESSES OF MAKING
    6.
    发明申请
    HIGH CONCENTRATION NITROGEN-CONTAINING GERMANIUM TELLURIDE BASED MEMORY DEVICES AND PROCESSES OF MAKING 有权
    含有高浓度含氮化学物质的基于德耳姆的基于记忆体的器件及其制备方法

    公开(公告)号：US20110260132A1

    公开(公告)日：2011-10-27

    申请号：US13132369

    申请日：2009-12-04

    Applicant: Jun-Fei Zheng ,  Jeffrey F. Roeder ,  Weimin Li ,  Philip S. H. Chen

    Inventor： Jun-Fei Zheng ,  Jeffrey F. Roeder ,  Weimin Li ,  Philip S. H. Chen

    IPC: H01L45/00 ,  H01L21/205

    CPC classification number: H01L45/1683 ,  C23C16/305 ,  C23C16/34 ,  H01L45/06 ,  H01L45/144 ,  H01L45/1616

    Abstract: A PCM device has the composition GexTeyNzAm deposited onto a substrate, where x is about 40% to about 60%, y is about 30% to about 49%, and z is about 5% to about 20% and more preferably about 5% to about 40%. The component represented as A is optional and representative of an element of Sb, Sn, In, Ga, or Zn, and m is up to about 15%. The composition is in the form of a film, and the nitrogen allows for the substantially conformal deposition of the film onto the substrate. A CVD process for depositing the PCM comprises delivering a Ge-based precursor and a Te-based precursor in vapor form to a CVD chamber, heating and pressurizing the chamber, and depositing the film onto a substrate. In making a phase change device using this process, the film is annealed and polished.

    Abstract translation: PCM装置具有沉积在基底上的组成GexTeyNzAm，其中x为约40％至约60％，y为约30％至约49％，z为约5％至约20％，更优选约5％至 约40％。 表示为A的组分是任选的，并且代表Sb，Sn，In，Ga或Zn的元素，并且m高达约15％。 组合物是膜的形式，并且氮允许膜基本上保形沉积到基底上。 用于沉积PCM的CVD方法包括将蒸气形式的基于Ge的前体和Te基前体输送到CVD室，对该室进行加热和加压，以及将该膜沉积在基底上。 在制造使用该工艺的相变装置时，将膜进行退火和抛光。

    Method for forming a selective contact and local interconnect in situ
    7.
    发明授权
    Method for forming a selective contact and local interconnect in situ 有权
    在原位形成选择性接触和局部互连的方法

    公开(公告)号：US07858518B2

    公开(公告)日：2010-12-28

    申请号：US10067410

    申请日：2002-02-04

    Applicant: Christopher W. Hill ,  Weimin Li ,  Gurtej S. Sandhu

    Inventor： Christopher W. Hill ,  Weimin Li ,  Gurtej S. Sandhu

    IPC: H01L21/4763

    CPC classification number: H01L21/76895 ,  H01L21/28518 ,  H01L21/28562 ,  H01L21/28568

    Abstract: A process for the in situ formation of a selective contact and a local interconnect on a semiconductor substrate. The exposed semiconductor substrate regions of a semiconductor device structure may be treated in a plasma to enhance the adhesiveness of a selective contact thereto. The semiconductor device structure is positioned within a reaction chamber, wherein a selective contact is deposited onto the exposed semiconductor substrate regions. Any residual selective contact material may be removed from oxide surfaces either intermediately or after selective contact deposition. While the semiconductor device remains in the reaction chamber, a local interconnect is deposited over the semiconductor device structure. The local interconnect may then be patterned. Subsequent layers may be deposited over the local interconnect. The present invention also includes semiconductor device structures formed by the inventive process.

    Abstract translation: 用于在半导体衬底上原位形成选择性接触和局部互连的方法。 可以在等离子体中处理半导体器件结构的暴露的半导体衬底区域以增强与其的选择性接触的粘合性。 半导体器件结构位于反应室内，其中选择性接触沉积在暴露的半导体衬底区域上。 任何残留的选择性接触材料可以在中间或选择性接触沉积之后从氧化物表面去除。 当半导体器件保留在反应室中时，在半导体器件结构上沉积局部互连。 然后可以对局部互连进行图案化。 随后的层可以沉积在局部互连上。 本发明还包括通过本发明方法形成的半导体器件结构。

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