发明申请
- 专利标题： Wafer processing method
- 专利标题（中）： 晶圆加工方法
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申请号： US10936679申请日： 2004-09-09
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公开(公告)号： US20050059183A1公开(公告)日： 2005-03-17
- 发明人: Yusuke Nagai , Masashi Aoki , Satoshi Kobayashi
- 申请人： Yusuke Nagai , Masashi Aoki , Satoshi Kobayashi
- 优先权： JP2003-319825 20030911
- 主分类号： B23K26/00
- IPC分类号： B23K26/00 ; B23K26/40 ; B23K101/40 ; H01L21/00 ; H01L21/301
摘要：
A wafer processing method for dividing a wafer having optical devices that are formed in a plurality of areas sectioned by dividing lines formed in a lattice pattern on the front surface, along the dividing lines, comprising a laser beam application step of applying a laser beam capable of passing through the wafer along the dividing lines to form deteriorated layers having a predetermined depth from the back surface of the wafer; a protective sheet affixing step of affixing a protective sheet to the front surface of the wafer having the deteriorated layers formed therein; a dividing step of dividing the wafer having the protective sheet affixed to the front surface along the deteriorated layers; and a grinding step of grinding the back surface of the wafer divided along the deteriorated layers in a state of the protective sheet being affixed to the wafer, to remove the deteriorated layers.
公开/授权文献
- US07134943B2 Wafer processing method 公开/授权日：2006-11-14
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