发明申请
- 专利标题： Semiconductor device and method of fabricating semiconductor device
- 专利标题（中）： 半导体器件及半导体器件的制造方法
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申请号： US10359553申请日： 2003-02-07
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公开(公告)号： US20050066887A1公开(公告)日： 2005-03-31
- 发明人: Tohru Saitoh , Katsuya Nozawa , Minoru Kubo , Shigetaka Aoki
- 申请人： Tohru Saitoh , Katsuya Nozawa , Minoru Kubo , Shigetaka Aoki
- 主分类号： H01L21/20
- IPC分类号： H01L21/20 ; H01L21/205 ; H01L21/331 ; H01L29/739 ; H01L31/0336
摘要：
A method of fabricating a semiconductor device according to the present invention includes a step A of forming a polycrystalline or amorphous preliminary semiconductor layer on a surface of a substrate so as to have an opening portion and a step B of simultaneously forming an epitaxial growth layer on an exposed portion of a surface of the substrate through the opening portion and a non-epitaxial growth layer on the preliminary semiconductor layer using a CVD method while heating the substrate inside a reaction chamber by means of a heat source inside the reaction chamber, the epitaxial growth layer being made of single crystalline semiconductor, and the non-epitaxial growth layer being comprised of a polycrystalline or amorphous semiconductor layer.
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