Semiconductor manufacturing apparatus and a manufacturing method of a semiconductor device capable of applying the single-wafer processing to the wet etching of a silicon nitride film are provided. Each one wafer is held by wafer holding means and etching solution is supplied to a deposited film of the wafer by etching solution supply means. The supplied etching solution is irradiated with electromagnetic wave by electromagnetic wave heating means so as to heat the etching solution to a high temperature and then the deposited film is wet-etched at a high etching rate. The wet etching with the process time appropriate for the single-wafer processing can be achieved. The used etching solution is collected by recycle means and is reused in the subsequent etching after adjusting its concentration.