Invention Application
- Patent Title: Interferometer endpoint monitoring device
- Patent Title (中): 干涉仪终点监测装置
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Application No.: US10672420Application Date: 2003-09-26
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Publication No.: US20050067103A1Publication Date: 2005-03-31
- Inventor: Khiem Nguyen , Peter Satitpunwaycha , Alfred Mak
- Applicant: Khiem Nguyen , Peter Satitpunwaycha , Alfred Mak
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Main IPC: C23F1/00
- IPC: C23F1/00 ; G03F1/08 ; H01J37/32
Abstract:
A photomask etch chamber, which includes a substrate support member disposed inside the chamber. The substrate support member is configured to support a photomask substrate. The chamber further includes a ceiling disposed on the chamber and an endpoint detection system configured to detect a peripheral region of the photomask substrate.
Information query
