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公开(公告)号：US08137867B2
公开(公告)日：2012-03-20
申请号：US12394503
申请日：2009-02-27
申请人： Osamu Nozawa
发明人： Osamu Nozawa
摘要： A photomask blank has a light-shielding film composed of at least two layers on a transparent substrate. The light-shielding film includes a light-shielding layer made of a material mainly containing tantalum nitride and further containing xenon and a front-surface antireflection layer formed on the light-shielding layer and made of a material mainly containing tantalum oxide and further containing argon.
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2.发明申请PHOTOMASK BLANK, PHOTOMASK, AND METHODS OF MANUFACTURING THE SAME 有权PHOTOMASK BLANK，PHOTOMASK及其制造方法公开(公告)号：US20110318674A1
公开(公告)日：2011-12-29
申请号：US13223140
申请日：2011-08-31
摘要： A photomask blank has a light shieldable film formed on a light transmitting substrate. The light shieldable film has a light shielding layer which is formed of molybdenum silicide metal containing molybdenum in a content greater than 20 atomic % and not greater than 40 atomic % and which has a thickness smaller than 40 nm, an antireflection layer formed on the light shielding layer in contact with the light shielding layer and formed of a molybdenum silicide compound containing at least one of oxygen and nitrogen, and a low reflection layer formed under the light shielding layer in contact with the light shielding layer.
摘要翻译： 光掩模坯料具有形成在透光基板上的可遮光膜。 可遮光膜具有遮光层，该遮光层由含有大于20原子％且不大于40原子％的钼含量的钼硅化物金属形成，并且具有小于40nm的厚度，形成在光上的抗反射层 与遮光层接触并由含有氧和氮中的至少一种的硅化钼化合物形成的屏蔽层和形成在与遮光层接触的遮光层下方的低反射层。
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公开(公告)号：US08007962B2
公开(公告)日：2011-08-30
申请号：US12585922
申请日：2009-09-29
摘要： A photomask includes a base, a plurality of chip pattern regions over which a light shielding pattern of a metal material is defined, the plurality of chip pattern regions being defined on the base, scribe regions defined between the chip pattern regions, the scribe regions being defined by using the light shielding pattern, and slits in which the light shielding pattern is not defined, the slits being defined so as to surround the chip pattern regions.
摘要翻译： 光掩模包括基底，多个芯片图案区域，金属材料的遮光图案被限定在其上，所述多个芯片图案区域被限定在基底上，划线区域限定在芯片图案区域之间，划线区域为 通过使用遮光图案限定，以及未限定遮光图案的狭缝，狭缝被限定为围绕芯片图案区域。
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公开(公告)号：US08003302B2
公开(公告)日：2011-08-23
申请号：US12346303
申请日：2008-12-30
申请人： Jin Ho Ryu
发明人： Jin Ho Ryu
CPC分类号： G03F1/29
摘要： Disclosed herein is a method for fabricating a pattern using a photomask that includes forming a first light shielding layer pattern over a substrate; forming a first resist layer pattern aligned to the first light shielding layer pattern over the first light shielding layer pattern; forming a phase shift region by selectively etching a portion of the substrate exposed by the first light shielding layer pattern; forming a second resist layer pattern by reducing the line width of the first resist layer pattern; forming a second light shielding layer pattern, having a reduced line width, by etching an exposed portion of the first light shielding layer pattern, and exposing a portion of the substrate adjacent the groove to form a rim region; removing the second resist layer pattern to form a photomask; and transferring a second pattern onto a wafer by performing an exposure process using the photomask.
摘要翻译： 本文公开了一种使用光掩模制造图案的方法，该光掩模包括在基板上形成第一遮光层图案; 在所述第一遮光层图案上形成与所述第一遮光层图案对准的第一抗蚀剂层图案; 通过选择性地蚀刻由所述第一遮光层图案曝光的所述衬底的一部分来形成相移区域; 通过减小第一抗蚀剂层图案的线宽来形成第二抗蚀剂层图案; 通过蚀刻所述第一遮光层图案的暴露部分并使所述基板的与所述凹槽相邻的部分露出以形成边缘区域，形成具有减小的线宽的第二遮光层图案; 去除第二抗蚀剂层图案以形成光掩模; 以及通过使用光掩模进行曝光处理将第二图案转印到晶片上。
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5.发明授权Method with correction of hard mask pattern critical dimension for fabricating photomask 有权用于制造光掩模的硬掩模图案临界尺寸校正方法公开(公告)号：US07901844B2
公开(公告)日：2011-03-08
申请号：US12164841
申请日：2008-06-30
申请人： Tae Joong Ha
发明人： Tae Joong Ha
CPC分类号： G03F1/26
摘要： A method for fabricating a photomask includes forming a light blocking layer, a hard mask layer, and a resist layer on a transparent substrate, forming a resist pattern to selectively expose the hard mask layer by removing the resist layer selectively, forming a hard mask pattern by etching the exposed hard mask layer using the resist pattern as an etch mask, exposing the hard mask pattern by removing the resist pattern; measuring a critical dimension of the exposed hard mask pattern, correcting the measured critical dimension of the hard mask pattern to correspond to a critical dimension of a target pattern, forming a light blocking pattern by etching the exposed light blocking layer using the corrected hard mask pattern as an etch mask, and removing the hard mask pattern.
摘要翻译： 一种光掩模的制造方法包括在透明基板上形成遮光层，硬掩模层和抗蚀剂层，形成抗蚀剂图案以选择性地暴露硬掩模层，通过选择性地去除抗蚀剂层，形成硬掩模图案 通过使用抗蚀剂图案作为蚀刻掩模蚀刻暴露的硬掩模层，通过去除抗蚀剂图案来暴露硬掩模图案; 测量所述暴露的硬掩模图案的临界尺寸，校正所述硬掩模图案的所测量的临界尺寸以对应于目标图案的临界尺寸，通过使用所述校正的硬掩模图案蚀刻所述曝光的遮光层来形成遮光图案 作为蚀刻掩模，并且去除硬掩模图案。
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6.发明授权Transmission mask with differential attenuation to improve ISO-dense proximity 有权具有差分衰减的传输掩模，以提高ISO密集接近度公开(公告)号：US07807342B2
公开(公告)日：2010-10-05
申请号：US11303301
申请日：2005-12-16
CPC分类号： G03F1/36 , G03F1/50 , G03F7/70283
摘要： An apparatus, system and method to compensate for the proximity effects in the imaging of patterns in a photolithography process. A light exposure of a photoresist layer is effectuated in predetermined patterns through an exposure mask having light-transmissive openings in correspondence to the predetermined patterns. The exposure mask has areas densely populated with the light-transmissive openings and areas sparsely populated with the light-transmissive openings. Light is attenuated through the densely populated light-transmissive openings by a different amount than through the sparsely populated light-transmissive openings.
摘要翻译： 一种用于补偿光刻工艺中图案成像中的邻近效应的装置，系统和方法。 通过具有对应于预定图案的透光开口的曝光掩模，以预定图案实现光致抗蚀剂层的曝光。 曝光掩模具有由透光开口和由透光开口稀疏地填充的区域密集地区域。 光通过密集居住的透光开口被衰减不同于通过疏散人口的透光开口的量。
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公开(公告)号：US07704646B2
公开(公告)日：2010-04-27
申请号：US11268032
申请日：2005-11-07
申请人： Sang-Uk Park , Kap-Seok Kang , Keun-Sik Lee , Jae-Woo Park , Yu-Kyung Sim
发明人： Sang-Uk Park , Kap-Seok Kang , Keun-Sik Lee , Jae-Woo Park , Yu-Kyung Sim
摘要： A half tone mask having a transparent substrate, a light semitransmission layer, and a light shield layer; and a method for fabricating the same. The halftone mask is applied to multiple cycles of a photolithography process, thus shortening a time taken to fabricate the mask and reducing the production costs of the mask. Since a desired pattern is uniformly formed through a light semitransmission layer of the half tone mask of the present invention according to the uniformity of a chrome oxide (CrxOy) film, i.e., the uniformity in sputtering, the halftone mask is not limited in size.
摘要翻译： 具有透明基板，光半透明层和遮光层的半色调掩模; 及其制造方法。 将半色调掩模应用于光刻工艺的多个循环，从而缩短制造掩模所需的时间并降低掩模的生产成本。 由于根据铬氧化物（CrxOy）膜的均匀性即溅射的均匀性，通过本发明的半色调掩模的半透射层均匀地形成期望的图案，所以半色调掩模的尺寸没有限制。
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公开(公告)号：US07563546B2
公开(公告)日：2009-07-21
申请号：US10707908
申请日：2004-01-23
申请人： Jason M. Benz
发明人： Jason M. Benz
摘要： Disclosed is a method for forming an optical mask that has reduced processing steps. The invention performs a first patterning of an opaque chrome layer to expose a first region of a transparent quartz substrate and ten etches the first region of the transparent quartz substrate through the chrome layer to create a phase shift region within the transparent quartz substrate. Next, the invention performs additional patterning of the opaque chrome layer to expose a second region of the transparent quartz substrate that is adjacent to the first region. This additional patterning process enlarges the opening formed in the opaque mask formed in the first patterning process. The first region and the second region comprise a continuous area of the transparent quartz substrate.
摘要翻译： 公开了一种形成光掩模的方法，其具有减少的处理步骤。 本发明执行不透明铬层的第一图案化以暴露透明石英衬底的第一区域，并且通过铬层蚀刻透明石英衬底的第一区域，以在透明石英衬底内产生相移区域。 接下来，本发明进行不透明铬层的附加图案化以暴露与第一区相邻的透明石英衬底的第二区域。 这种附加的图案化工艺扩大了在第一图案化工艺中形成的不透明掩模中形成的开口。 第一区域和第二区域包括透明石英衬底的连续区域。
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公开(公告)号：US06998199B2
公开(公告)日：2006-02-14
申请号：US10302529
申请日：2002-11-22
申请人： Chul-Hong Park , Moon-Hyun Yoo , Yoo-Hyon Kim , Dong-Hyun Kim , Soo-Han Choi
发明人： Chul-Hong Park , Moon-Hyun Yoo , Yoo-Hyon Kim , Dong-Hyun Kim , Soo-Han Choi
CPC分类号： G03F1/30 , G03F1/32 , G03F1/70 , G03F7/70466
摘要： A set of masks including an alternating phase shifting mask (APSM) and a halftone phase shifting trim mask (HPSTM) is provided. The APSM includes first and second phase shifting areas and a first opaque pattern. The first and second phase shifting areas are disposed adjacent to each other and have different phases for generating destructive interference. Further, the first and second phase shifting areas define an access interconnection line. The first opaque pattern is formed on a transparent substrate to define the first and second phase shifting areas. The HPSTM includes a second opaque pattern on the transparent substrate and a halftone pattern. The second opaque pattern prevents an access interconnection line from being erased. The halftone pattern defines a pass interconnection line connected to the access interconnection line.
摘要翻译： 提供了包括交替相移掩模（APSM）和半色调相移修剪蒙版（HPSTM）的一组掩模。 APSM包括第一和第二相移区域和第一不透明图案。 第一和第二相移区域彼此相邻设置并且具有不同的相位以产生破坏性干扰。 此外，第一和第二相移区域限定了接入互连线。 第一不透明图案形成在透明基板上以限定第一和第二相移区域。 HPSTM在透明基板上包括第二不透明图案和半色调图案。 第二个不透明图案防止访问互连线被擦除。 半色调图案定义了连接到接入互连线的通过互连线。
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10.发明授权Lithographic photomask and method of manufacture to improve photomask test measurement 失效平版印刷光掩模和制造方法以改进光掩模测试测量公开(公告)号：US06974652B1
公开(公告)日：2005-12-13
申请号：US10699748
申请日：2003-11-03
摘要： A photomask for use in a lithographic process and a method of making a photomask are disclosed. A mask blank including a substrate, a sacrificial conductive layer disposed over the substrate and a radiation shielding layer disposed over the sacrificial conductive layer can be provided. Structures are then formed from the radiation shielding layer to define a pattern. Measurement of parameters associated with the structures are made with a measurement tool and, during the measuring, the sacrificial conductive layer provides a conductive plane to dissipate charge transferred to the mask by the measurement tool.
摘要翻译： 公开了用于光刻工艺的光掩模和制造光掩模的方法。 可以提供包括衬底，设置在衬底上的牺牲导电层和设置在牺牲导电层上方的辐射屏蔽层的掩模坯料。 然后从辐射屏蔽层形成结构以限定图案。 使用测量工具测量与结构相关的参数，并且在测量期间，牺牲导电层提供导电平面以消散由测量工具传递到掩模的电荷。
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